Method of controlling a memory system

Patent metadata

Field	Value
Publication number	US-9720624-B2
Application number	US-201514602990-A
Country	US
Kind code	B2
Filing date	Jan 22, 2015
Priority date	Feb 5, 2014
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

According to example embodiments, a method of controller a memory system using a controller includes receiving a first read count command, determining if a read count of a non-volatile memory in the memory system exceeds a threshold value, and performing a first reading operation on the non-volatile memory according to the first read command. If the read count of the non-volatile memory exceeds the threshold value, then addresses are selected to which a plurality of additive reading operation corresponding to the first read command will be performed, in a random neighbor selection operation. The plurality of additive reading operations for checking data of neighboring pages of the page for performing the reading operation are distributed and processed.

First claim

What is claimed is:

1. A method of controlling a memory system using a controller, the method comprising:
receiving a first read command;
determining whether a record exists that indicates previous additive reading operations have been recorded and have not been performed yet, the previous additive reading operations corresponding to addresses of pages that neighbor a page associated with a previous read operation performed among a plurality of pages, the plurality of pages being included in a non-volatile memory in the memory system;
determining if a read count of the non-volatile memory exceeds a threshold value, in response to the record not existing;
in response to the read count of the non-volatile memory exceeding the threshold value, and the record does not existing, selecting addresses to which a plurality of additive reading operations corresponding to the first read command will be performed, in a random neighbor selection operation;
performing a first reading operation on the non-volatile memory according to the first read command; and
distributing the plurality of additive reading operations to check data of neighboring pages of a page on which the first reading operation has been performed.

2. The method of claim 1 , wherein the distributing of the plurality of additive reading operations includes:
performing one of the plurality of additive reading operations after the first reading operation; and
storing addresses for remaining ones of the plurality of additive reading operations, except for the one of the plurality of additive reading operations that has been performed, using the controller.

3. The method of claim 1 , further comprising:
in response to the read count of the non-volatile memory exceeding the threshold value, and the record not existing, changing the threshold value.

4. The method of claim 1 , further comprising:
receiving a second read command;
determining whether the additive reading operations according to the first read command are associated with a chip in the non-volatile memory that is different than a chip in the non-volatile memory associated with the second read command; and
simultaneously performing the additive reading operations according to the first read command and a second reading operation according to the second read command in response to the additive reading operations according to the first read command and the second read command being associated with different chips in the non-volatile memory.

5. The method of claim 1 , further comprising:
converting addresses of the plurality of additive reading operations corresponding to the first read command into logical addresses by using a flash translation layer (FTL);
determining whether the logical addresses that are converted by the FTL are valid; and
in response to the logical addresses not being valid, selecting other addresses of the additive reading operations corresponding to the first read command in the random neighbor selection operation.

6. The method of claim 1 , wherein the distributed additive reading operations are performed during an idle time of the controller.

7. The method of claim 1 , wherein
the addresses of the plurality of additive reading operations corresponding to the first read command, which are selected in the random neighbor selection operation, are included in one of a self block and an adjacent neighboring block of the non-volatile memory, and
an address of a selected memory cell read during the first read command is in the self block of the non-volatile memory.

8. The method of claim 7 , further comprising:
checking states of a string selection transistor and a ground selection transistor in the one of the self block and the adjacent neighboring block of the non-volatile memory on which the plurality of additive reading operations corresponding to the first read command are performed.

9. The method of claim 1 , wherein at least one of the non-volatile memory comprises a three-dimensional memory array.

10. The method of claim 9 , wherein the three-dimensional memory is monolithically formed in one or more physical levels of memory cells having active areas disposed above a silicon substrate.

11. The method of claim 9 , wherein the three dimensional memory array comprises a plurality of memory cells, each of the memory cells including a charge trap layer.

12. The method of claim 9 , wherein at least one of word lines and bit lines in the three-dimensional memory array are shared between levels.

13. A method of controlling a memory system using a controller, the method comprising:
receiving a read command;
determining whether a record exists that indicates previous additive reading operations have been recorded and have not been performed yet, the previous additive reading operations corresponding to addresses of pages that neighbor a page associated with a previous read operation performed among a plurality of pages, the plurality of pages included in a non-volatile memory in the memory system;
in response to the record not existing, determining if a read count of the non-volatile memory exceeds a threshold value;
in response to the read count of the non-volatile memory exceeding the threshold value, and the record not existing, selecting addresses to which a plurality of additive reading operations corresponding to the read command in a random neighbor selection operation for checking data of a neighboring page of a page on which a reading operation according to the read command would be performed;
transmitting the addresses for performing the plurality of additive reading operations corresponding to the read command to a host;
performing the reading operation according to the read command; and
performing the plurality of additive reading operations as user reading operations by the host.

14. The method of claim 13 , further comprising;
changing the threshold value of the read count in response to the read count of the non-volatile memory for performing the read command exceeding the threshold value and the record not existing.

15. The method of claim 13 , further comprising:
checking states of a string selection transistor and a ground selection transistor in a block of the non-volatile memory on which the plurality of additive reading operations corresponding to the read command are performed.

16. A method of controlling a memory system using a controller, the method comprising:
receiving a first read command;
determining an address of a selected memory cell associated with the first read command, the selected memory cell being in a selected page among a plurality of pages in a non-volatile memory of the memory system, each page including a plurality of memory cells;
determining whether a record exists that indicates previous additive reading operations have been recorded and have not been performed yet, the previous additive reading operations corresponding to addresses of pages that neighbor a page associated with a previous read operation performed among the plurality of pages;
performing a first reading operation on the selected page according to the first read command;
distributing remaining ones of the previous additive reading operations, in response to the record not existing, by performing at least one of the remaining ones of the previous additive reading operations before the first reading operation is finished in order to check data of one of the pages that neighbor the page associated with the previous read operation;
determining whether a read count of the non-volatile memory exceeds a threshold value, in respo

Assignees

• Moon Sang-Kwon
• Kim Kyung-Ryun
• Kim Dong-Sub
• Kim Kyung-Ho
• Samsung Electronics Co Ltd

Inventors

• Moon Sang-Kwon
• Kim Kyung-Ryun
• Kim Dong-Sub
• Kim Kyung-Ho

Classifications

• G06F12/0246

  in block erasable memory, e.g. flash memory · CPC title

• G06F2212/7201

  Logical to physical mapping or translation of blocks or pages · CPC title

• G06F3/0688

  Non-volatile semiconductor memory arrays · CPC title

• G06F2212/1024

  Latency reduction · CPC title

• G06F3/0638

  Organizing or formatting or addressing of data · CPC title