Projection objective of a microlithographic projection exposure apparatus

US9720329B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9720329-B2
Application numberUS-201615070757-A
CountryUS
Kind codeB2
Filing dateMar 15, 2016
Priority dateNov 5, 2010
Publication dateAug 1, 2017
Grant dateAug 1, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

First claim

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The invention claimed is: 1. A projection objective configured to image an object plane into an image plane, the projection objective comprising: a first mirror comprising a main mirror and a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each other by transitional regions between adjacent circular ring segment mirrors, wherein during use of the projection objective: partial beam paths which are different from each other are associated with the circular ring segment mirrors; the partial beams image the object plane into the image plane; the partial beam paths are superposed in the image plane; and at least two partial beams are reflected from different circular ring segment mirrors and are superposed on the same point in the image plane; and wherein the circular ring segment mirrors surround the main mirror, and the projection objective is an EUV microlithographic projection objective. 2. The projection objective of claim 1 , wherein, along a path of a partial beam from the object plane to the image plane, the first mirror is a last reflecting arrangement of the projection objective. 3. The projection objective of claim 1 , wherein the first mirror is a mirror of the projection objective having a maximum of total optically effective surface size. 4. The projection objective of claim 1 , wherein the segment arrangement comprises at least three circular ring segment mirrors. 5. The projection objective of claim 1 , wherein the circular ring segment mirrors respectively form with each other a continuous reflecting surface interrupted only by the transitional regions. 6. The projection objective of claim 1 , wherein the circular ring segment mirrors respectively form with each other a reflecting surface interrupted only by the transitional regions between adjacent circular ring segment mirrors. 7. The projection objective of claim 1 , further comprising a shutter arrangement configured so that during use of the projection objective illumination of the first mirror is selectively limited to different circular ring segment mirrors. 8. The projection objective of claim 1 , wherein at least two of the circular ring segment mirrors are movable relative to each other. 9. The projection objective of claim 1 , further comprising a shutter arrangement configured so that a space between circular ring segment mirrors is at least partially arranged in a shadow of the obscuration shutter arrangement. 10. A projection objective configured to image an object plane into an image plane, the projection objective comprising: a plurality of mirrors including a mirror having a maximum total reflecting surface compared to the other mirrors, the mirror having the maximum total reflecting surface comprising a main mirror and a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors, wherein the circular ring segment mirrors surround the main mirror, and the projection objective is an EUV microlithographic projection objective. 11. A projection objective configured to image an object plane into an image plane, the projection objective comprising: a mirror comprising a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors; and a shutter arrangement configured so that, during use of the projection objective, a space between circular ring segment mirrors is at least partially arranged in a shadow of the shutter arrangement. 12. The projection objective of claim 11 , wherein the space is rotationally symmetric. 13. The projection objective of claim 11 , wherein the shutter arrangement is rotationally symmetric. 14. The projection objective of claim 11 , wherein the shutter arrangement is a plane of the projection objective in which a parameter P(M) which is defined as: P ⁡ ( M ) = D ⁡ ( SA ) D ⁡ ( SA ) + D ⁡ ( CR ) , and wherein P(M) is at least 0.8, D(SA) is a subaperture diameter, and D(CR) is a maximum principal ray spacing defined over all field points of the optically used field on an optical surface M in the plane. 15. The projection objective of claim 11 , wherein the projection objective has an optical axis, the shutter arrangement is of n-fold symmetry with respect to the optical axis, and n is a natural number greater than zero. 16. A method of producing a projection objective of an EUV microlithographic projection exposure apparatus configured to image an object plane into an image plane, the projection objective comprising a plurality of mirrors, at least one of the plurality of mirrors comprising a main mirror and a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors, the plurality of separate circular ring segment mirrors comprising a first circular ring segment mirror and a second ring segment mirror which is different from the first ring segment mirror, the plurality of circular ring segment mirrors surrounding the main mirror, the method comprising: reflecting a first partial beam from the first circular ring segment mirror; reflecting a second partial beam from the second circular ring segment mirror; and superposing the first and second partial beams in the image plane. 17. A method of optically adjusting a projection objective of a microlithographic projection exposure apparatus, the projection objective comprising a plurality of mirrors, the projection objective comprising a main mirror and a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors, the method comprising: orienting the circular ring segment mirrors in an orientation in which a first subset of circular ring segment mirrors image an object plane of the projection objective into an image plane of the projection objective; and orienting the circular ring segment mirrors in an orientation in which a second subset of circular ring segment mirrors image an object plane of the projection objective into an image plane of the projection objective, wherein the first subset of circular ring segment mirrors is not identical to the second subject of circular ring segment mirrors. 18. An arrangement configured to optically adjust a microlithographic projecti

Assignees

Inventors

Classifications

  • Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift · CPC title

  • Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems · CPC title

  • with means for adjusting the mirror relative to its support {(G02B7/1822 takes precedence)} · CPC title

  • G03F7/702Primary

    Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems · CPC title

  • using mirrors only {, i.e. having only one curved mirror (used in non-imaging applications G02B19/00)} · CPC title

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What does patent US9720329B2 cover?
The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same …
Who is the assignee on this patent?
Zeiss Carl Smt Gmbh
What technology area does this patent fall under?
Primary CPC classification G03F7/70308. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 01 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).