Projection lens with wavefront manipulator
US-2015370172-A1 · Dec 24, 2015 · US
US9720329B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9720329-B2 |
| Application number | US-201615070757-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2016 |
| Priority date | Nov 5, 2010 |
| Publication date | Aug 1, 2017 |
| Grant date | Aug 1, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.
Opening claim text (preview).
The invention claimed is: 1. A projection objective configured to image an object plane into an image plane, the projection objective comprising: a first mirror comprising a main mirror and a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each other by transitional regions between adjacent circular ring segment mirrors, wherein during use of the projection objective: partial beam paths which are different from each other are associated with the circular ring segment mirrors; the partial beams image the object plane into the image plane; the partial beam paths are superposed in the image plane; and at least two partial beams are reflected from different circular ring segment mirrors and are superposed on the same point in the image plane; and wherein the circular ring segment mirrors surround the main mirror, and the projection objective is an EUV microlithographic projection objective. 2. The projection objective of claim 1 , wherein, along a path of a partial beam from the object plane to the image plane, the first mirror is a last reflecting arrangement of the projection objective. 3. The projection objective of claim 1 , wherein the first mirror is a mirror of the projection objective having a maximum of total optically effective surface size. 4. The projection objective of claim 1 , wherein the segment arrangement comprises at least three circular ring segment mirrors. 5. The projection objective of claim 1 , wherein the circular ring segment mirrors respectively form with each other a continuous reflecting surface interrupted only by the transitional regions. 6. The projection objective of claim 1 , wherein the circular ring segment mirrors respectively form with each other a reflecting surface interrupted only by the transitional regions between adjacent circular ring segment mirrors. 7. The projection objective of claim 1 , further comprising a shutter arrangement configured so that during use of the projection objective illumination of the first mirror is selectively limited to different circular ring segment mirrors. 8. The projection objective of claim 1 , wherein at least two of the circular ring segment mirrors are movable relative to each other. 9. The projection objective of claim 1 , further comprising a shutter arrangement configured so that a space between circular ring segment mirrors is at least partially arranged in a shadow of the obscuration shutter arrangement. 10. A projection objective configured to image an object plane into an image plane, the projection objective comprising: a plurality of mirrors including a mirror having a maximum total reflecting surface compared to the other mirrors, the mirror having the maximum total reflecting surface comprising a main mirror and a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors, wherein the circular ring segment mirrors surround the main mirror, and the projection objective is an EUV microlithographic projection objective. 11. A projection objective configured to image an object plane into an image plane, the projection objective comprising: a mirror comprising a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors; and a shutter arrangement configured so that, during use of the projection objective, a space between circular ring segment mirrors is at least partially arranged in a shadow of the shutter arrangement. 12. The projection objective of claim 11 , wherein the space is rotationally symmetric. 13. The projection objective of claim 11 , wherein the shutter arrangement is rotationally symmetric. 14. The projection objective of claim 11 , wherein the shutter arrangement is a plane of the projection objective in which a parameter P(M) which is defined as: P ( M ) = D ( SA ) D ( SA ) + D ( CR ) , and wherein P(M) is at least 0.8, D(SA) is a subaperture diameter, and D(CR) is a maximum principal ray spacing defined over all field points of the optically used field on an optical surface M in the plane. 15. The projection objective of claim 11 , wherein the projection objective has an optical axis, the shutter arrangement is of n-fold symmetry with respect to the optical axis, and n is a natural number greater than zero. 16. A method of producing a projection objective of an EUV microlithographic projection exposure apparatus configured to image an object plane into an image plane, the projection objective comprising a plurality of mirrors, at least one of the plurality of mirrors comprising a main mirror and a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors, the plurality of separate circular ring segment mirrors comprising a first circular ring segment mirror and a second ring segment mirror which is different from the first ring segment mirror, the plurality of circular ring segment mirrors surrounding the main mirror, the method comprising: reflecting a first partial beam from the first circular ring segment mirror; reflecting a second partial beam from the second circular ring segment mirror; and superposing the first and second partial beams in the image plane. 17. A method of optically adjusting a projection objective of a microlithographic projection exposure apparatus, the projection objective comprising a plurality of mirrors, the projection objective comprising a main mirror and a segment arrangement comprising a plurality of separate circular ring segment mirrors separated from each by transitional regions between adjacent circular ring segment mirrors, the method comprising: orienting the circular ring segment mirrors in an orientation in which a first subset of circular ring segment mirrors image an object plane of the projection objective into an image plane of the projection objective; and orienting the circular ring segment mirrors in an orientation in which a second subset of circular ring segment mirrors image an object plane of the projection objective into an image plane of the projection objective, wherein the first subset of circular ring segment mirrors is not identical to the second subject of circular ring segment mirrors. 18. An arrangement configured to optically adjust a microlithographic projecti
Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift · CPC title
Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems · CPC title
with means for adjusting the mirror relative to its support {(G02B7/1822 takes precedence)} · CPC title
Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems · CPC title
using mirrors only {, i.e. having only one curved mirror (used in non-imaging applications G02B19/00)} · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.