Lithographic Apparatus and Method of Manufacturing a Device

Patent metadata

Field	Value
Publication number	US-2015192861-A1
Application number	US-201314419425-A
Country	US
Kind code	A1
Filing date	Jul 30, 2013
Priority date	Aug 3, 2012
Publication date	Jul 9, 2015
Grant date	—

Abstract

There is disclosed a lithographic apparatus provided with a spectral purity filter which may be provided in one or more of the following locations: (a) in the illumination system, (b) adjacent the patterning device, either a static location in the radiation beam or fixed for movement with the patterning device, (c) in the projection system, and (d) adjacent the substrate table. The spectral purity filter is preferably a membrane formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.

First claim

1 . A lithographic apparatus comprising:
an illumination system configured to condition a radiation beam; a support structure configured to support a patterning device; a substrate table configured to hold a substrate; a projection system configured to project a pattern imparted to the radiation beam by the patterning device onto a target portion of the substrate; and a filter provided adjacent the substrate table and configured to reduce or eliminate non-EUV radiation, wherein the filter at least partially closes an opening in the projection system, and wherein the filter comprises a membrane.

2 . (canceled)

3 . The lithographic apparatus as claimed in claim 1 , wherein said filter is movable between a first position in the path of the radiation beam and a second position in which the filter is not in the path of the radiation beam.

4 . The lithographic apparatus as claimed in claim 3 , wherein said filter is mounted in a holder, said holder being movable between a first location wherein said filter is provided in said first in use position and a second location wherein said filter is provided in said second position.

5 . The lithographic apparatus as claimed in claim 4 , wherein said projection system has a projection system wall, said projection system wall including said opening, and wherein said first location comprises a recessed portion of said projection system wall surrounding said opening.

6 . The lithographic apparatus as claimed in claim 5 , wherein said holder is provided with an inner annular wall, and wherein said inner annular wall forms a part of said opening when said holder is in said first location.

7 . The lithographic apparatus as claimed in claim 6 , wherein said holder is provided with conduits to permit a gas to be supplied to said opening.

8 . The lithographic apparatus as claimed in claim 3 , further comprising a closure member adapted to close said opening when said filter is removed.

9 . The lithographic apparatus as claimed in claim 8 , wherein said closure member includes a first conduit connecting an interior and an exterior of said projection system, and a second conduit for delivering gas to said first conduit.

10 . (canceled)

11 . (canceled)

12 . The lithographic apparatus as claimed in claim 1 , wherein at least one conduit is provided for supplying a gas to said opening, wherein another gas is supplied to both sides of said filter.

13 . (canceled)

14 . (canceled)

15 . The lithographic apparatus as claimed in claim 1 , wherein a gas supply is provided for supplying hydrogen gas to a surface of the filter, and wherein a heating element is provided in said gas supply and configured to generate hydrogen radicals that are delivered to the surface of the filter.

16 .- 19 . (canceled)

20 . The lithographic apparatus as claimed in claim 1 , wherein a gas supply line is provided to deliver gas to a location adjacent said filter, and wherein said gas supply line is provided with a branch that delivers gas to a location remote from said filter, said gas supply line and said branch being provided with respective flow restriction elements configured such that at a low gas flow rate, gas is delivered to said filter, and at a high gas flow rate, the majority of gas is supplied to said remote location.

21 .- 26 . (canceled)

27 . The lithographic apparatus as claimed in claim 1 , wherein the filter further comprises a layer of capping material.

28 . The lithographic apparatus as claimed in claim 1 , wherein the filter comprises layers of niobium, molybdenum and silicon.

29 . The lithographic apparatus as claimed in claim 1 , wherein the filter comprises a curved membrane adapted configured to compensate for transmission variation.

30 . The lithographic apparatus as claimed in claim 1 , wherein the filter comprises a membrane of varying thickness configured to compensate for transmission variation.

31 .- 34 . (canceled)

35 . A method of manufacturing a device using a lithographic apparatus, comprising:
generating a beam of EUV radiation; conditioning the radiation beam in an illumination system and directing the radiation beam onto a patterning device; projecting a patterned radiation beam onto a substrate supported on a substrate table by means of a projection system; filtering, using a filter, the radiation beam in a location adjacent the substrate table; and at least partially closing an opening in the projection system using the filter, wherein said opening is provided in a wall of said projection system facing the substrate table, and wherein the filter comprises a membrane.

36 .- 64 . (canceled)

65 . The method as claimed in claim 35 , further comprising: removing wrinkles from said membrane by maintaining a pressure differential across said membrane.

66 .- 69 . (canceled)

70 . The apparatus according to claim 1 , wherein the filter has a deep ultraviolet (DUV) transmission of less than 30% and/or is an extreme ultraviolet (EUV) transmission filter with an EUV transmission of at least 80%.

71 . The apparatus according to claim 1 , wherein the membrane includes any of: polysilicon, a multilayer material, a carbon nanotube material or graphene.

72 . The method according to claim 35 , wherein the membrane includes any of: polysilicon, a multilayer material, a carbon nanotube material or graphene.

Assignees

• Asml Netherlands Bv

Inventors

• Banine Vadim Yevgenyevich
• Minnaert Arthur Winfried Eduardus
• Muitjens Johannus Elisabeth Hubertus
• Yakunin Andrei Mikhailovich
• Scaccabarozzi Luigi
• Mallmann Hans Joerg
• Bal Kurstat
• Luijten Carlo Cornelis Maria
• Nienhuys Han-Kwang
• Huijberts Alexander Marinus Arnoldus
• Gasseling Paulus Albertus Maria
• Rizo Diago Pedro Julian
• Van Kampen Maarten
• Van Aerle Nicolaas Aldegonda Jan Maria

Classifications

• G03F7/70575

  Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength · CPC title

• G21K1/10

  Scattering devices; Absorbing devices; Ionising radiation filters · CPC title

• G03F7/70308

  Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift · CPC title

• G03F7/70191 Primary

  Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like · CPC title