Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element

Patent metadata

Field	Value
Publication number	US-9720054-B2
Application number	US-201414529594-A
Country	US
Kind code	B2
Filing date	Oct 31, 2014
Priority date	Oct 31, 2014
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

Electronic circuits used in magnetic field sensors use transistors for passing a current through the transistors and also through a magnetoresistance element.

First claim

What is claimed is:

1. An electronic circuit coupled to receive a power supply voltage, comprising:
a first magnetoresistance element having first and second terminals;
a first transistor having a control node, a first current passing node, and a second current passing node;
a first voltage generating source having first and second nodes between which a first fixed voltage is generated, wherein the first terminal of the first magnetoresistance element is coupled to the first current passing node of the first transistor, wherein the first node of the first voltage generating source is coupled to the control node of the first transistor and the second node of the first voltage generating source is coupled to the second terminal of the first magnetoresistance element, wherein the electronic circuit is operable to generate a first current signal at the second current passing node of the first transistor related to a resistance value of the first magnetoresistance element;
a second magnetoresistance element having first and a second terminals;
a second transistor having a control node, a first current passing node, and a second current passing node;
a second voltage generating source having first and second nodes between which a second fixed voltage is generated; and

a load coupled to the second current passing node of the first transistor, wherein the second current passing node of the first transistor is coupled to the second current passing node of the second transistor, wherein the first terminal of the second magnetoresistance element is coupled to the first current passing node of the second transistor, wherein the first node of the second voltage generating source is coupled to the control node of the second transistor and the second node of the second voltage generating source is coupled to the second terminal of the second magnetoresistance element, wherein the electronic circuit is operable to generate a second current signal at the second current passing node of the second transistor related to a resistance value of the second magetoresistance element, wherein a current passing through the load is equal to a difference between the first current signal and the second current signal, wherein the second terminals of the first and second magnetoresistance elements are not coupled together.

2. The electronic circuit of claim 1 , wherein the first transistor is an NPN bipolar transistor and the second transistor is a PNP bipolar transistor.

3. The electronic circuit of claim 1 , wherein the first transistor is a PNP bipolar transistor and the second transistor is an NPN bipolar transistor.

4. The electronic circuit of claim 1 , further comprising:
a comparator coupled to the second current passing node of the first transistor for generating a two state output signal.

5. The electronic circuit of claim 1 , wherein the first voltage generating source comprises a reference leg of a current mirror circuit.

6. The electronic circuit of claim 1 , further comprising:
a comparator coupled to the second current passing node of the first transistor for generating a two state output signal.

7. The electronic circuit of claim 1 , further comprising:
a third magnetoresistance element having first and second terminals;
a third transistor having a control node, and first current passing node, and a second current passing node;
a third voltage generating source having first and second nodes between which a third fixed voltage is generated, wherein the first terminal of the third magnetoresistance element is coupled to the first current passing node of the third transistor, wherein the first node of the third voltage generating source is coupled to the control node of the third transistor and the second node of the third voltage generating source is coupled to the second terminal of the third magnetoresistance element, wherein the electronic circuit is operable to generate a third current signal at the second current passing node of the third transistor related to a resistance value of the third magnetoresistance element, wherein the electronic circuit further comprises:
a fourth magnetoresistance element having first and second terminals;
a fourth transistor having a control node, a first current passing node, and a second current passing node;
a fourth voltage generating source having first and second nodes between which a fourth fixed voltage is generated; and
a second load coupled to the second current passing node of the third transistor, wherein the second current passing node of the third transistor is coupled to the second current passing node of the fourth transistor, wherein the first terminal of the fourth magnetoresistance element is coupled to the first current passing node of the fourth transistor, wherein the first node of the fourth voltage generating source is coupled to the control node of the fourth transistor and the second node of the fourth voltage generating source is coupled to the second terminal of the fourth magnetoresistance element, wherein the electronic circuit is operable to generate a fourth current signal at the second current passing node of the fourth transistor related to a resistance value of the fourth magnetoresistance element, wherein a current passing through the second load is equal to a difference between the third current signal and the fourth current signal.

8. The electronic circuit of claim 7 , wherein the first voltage generating source and the third voltage generating source are a same first common voltage generating source.

9. The electronic circuit of claim 8 , wherein the same first common voltage generating source comprises a reference leg of a current mirror circuit.

10. The electronic circuit of claim 8 , wherein the second voltage generating source and the fourth voltage generating source are a same second common voltage generating source.

11. The electronic circuit of claim 10 , wherein the same first common voltage generating source comprises a reference leg of a current mirror circuit and wherein the same second common voltage generating source comprises a common mode voltage detector circuit coupled to the first and second loads and configured to generate the first and third voltages as the same common mode voltage related to a common mode voltage between the first and second loads.

12. The electronic circuit of claim 7 , wherein the second voltage generating source and the fourth voltage generating source are a same common voltage generating source.

13. The electronic circuit of claim 12 , wherein the same common voltage generating source comprises a common mode voltage detector circuit coupled to the first and second loads and configured to generate the first and third voltages as the same common mode voltage related to a common mode voltage between the first and second loads.

14. A magnetic field sensor coupled to receive a power supply voltage, comprising:
a substrate; and
an electronic circuit disposed upon the substrate, the electronic circuit comprising:
a first magnetoresistance element having first and second terminals;
a first transistor having a control node, and first current passing node, and a second current passing node;
a first voltage generating source having first and second nodes between which a first fixed voltage is generated, wherein the first terminal of the first magnetoresistance element is coupled to the first current passing node of the first transistor, wherein the first node of the first voltage generating source is coupled to the control node of the first transistor and the second node of the first voltage generating source is coupled to the seco

Assignees

• Allegro Microsystems Llc

Inventors

• Drouin Mathew
• Fernandez Devon
• Towne Jay M
• Milesi Alejandro G

Classifications

• G01R33/09

  Magnetoresistive devices · CPC title

• G01R33/028 Primary

  Electrodynamic magnetometers · CPC title

• G01R33/0023 Primary

  Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration (G01R33/0017 takes precedence) · CPC title