Magnetic field sensor based on topological insulator and insulating coupler materials

Patent metadata

Field	Value
Publication number	US-9716221-B2
Application number	US-201514950576-A
Country	US
Kind code	B2
Filing date	Nov 24, 2015
Priority date	Aug 11, 2015
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.

First claim

What is claimed is:

1. A method of forming a sensor comprising:
forming a first electrode;
forming a second electrode;
forming a detector region;
electrically coupling the detector region to the first electrode and the second electrode;
forming the detector region to include a first layer comprising a topological insulator;
the topological insulator having a conducing path along a surface of the topological insulator;
forming the detector region to further include a second layer comprising a first insulating magnetic coupler;
wherein a magnetic field applied to the detector region changes a resistance of the conducting path;
wherein the first insulating magnetic coupler amplifies the magnetic field applied to the detector region; and
forming the detector region to further comprise a third layer comprising a second insulating magnetic coupler;
wherein the second insulating magnetic coupler amplifies the magnetic field applied to the detector region.

2. The method of claim 1 , wherein:
the topological insulator comprises implanted magnetic particles; and
the implanted magnetic particles amplify the magnetic field applied to the detector region.

3. The method of claim 1 further comprising forming a vacuum enclosure over at least a surface of the detector region.

4. The method of claim 1 further comprising:
forming a substrate;
wherein the surface of the topological insulator is formed by:
forming a horizontal region that is substantially parallel to a surface of the substrate; and
forming a vertical region that is substantially perpendicular to the surface of the substrate:
wherein the magnetic field applied to the detector region comprises a magnetic field perpendicular the horizontal region or a magnetic field perpendicular the vertical region.

Assignees

• IBM

Inventors

• Annunziata Anthony J
• Chudow Joel D
• Worledge Daniel C

Classifications

• H01L43/08

  Electricity · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H10N50/01

  Manufacture or treatment · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title