Apparatus for doping impurities, method for doping impurities, and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9716008-B2
Application number	US-201615094536-A
Country	US
Kind code	B2
Filing date	Apr 8, 2016
Priority date	Apr 13, 2015
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

An apparatus for doping impurities includes: a bath reserving liquid containing impurity elements; a liquid transport device transporting the liquid on a surface of a semiconductor substrate; a laser optical system which scans and irradiates light pulses of laser onto the surface of the semiconductor substrate; an X-Y manipulator moving the semiconductor substrate; and an arithmetic and control unit which controls the liquid transport device and X-Y manipulator. Flow rate of the liquid and scanning velocity of the light pulses are determined, by a characteristic dimension of the irradiation area along the flow direction of the liquid, an overlapping ratio of the irradiation area, and the radius of a bubble generated in the liquid. The impurity elements are doped into a part of the inside of the semiconductor substrate at the determined flow rate and scanning velocity.

First claim

What is claimed is:

1. A method for doping impurities, comprising:
determining a flow rate of a liquid and a scanning velocity of light pulses, by which a surface of a semiconductor substrate is scanned, by:
a characteristic dimension of irradiation area of the light pulses scanned and irradiated into the liquid, which contains impurity elements and moves on a surface of the semiconductor substrate at a fixed flow rate, the characteristic dimension being along a flow direction of the liquid,
an overlapping ratio, which is a ratio of a length, of an area overlapping between a prior and a subsequent irradiation area, in a scanning direction of the light pulses to a length of the irradiation area in the scanning direction, and
a radius of a bubble generated in the liquid; and

transporting the liquid on the surface of the semiconductor substrate at the determined flow rate while scanning and irradiating the light pulses onto the surface of the semiconductor substrate through the liquid at the determined scanning velocity to dope the impurity elements into a part of the inside of the semiconductor substrate.

2. The method of claim 1 , wherein the determining flow rate of the liquid includes:
calculating the minimum movement distance that the bubble moves along the flow direction of the liquid through the characteristic length, the overlapping ratio, the radius of the bubble, the angle between the scanning direction and the movement direction of the bubble within a repetition period of a sequence of two shots of the light pulse, the light pulses are irradiated into the liquid in scanning, the bubble is generated by a prior shot of the two shots;
calculating the minimum value of flow rate of the liquid, which is needed for the bubble to move the minimum movement distance; and
determining the flow rate of the liquid to a value larger than the calculated minimum value.

3. The method of claim 2 , wherein the calculating the minimum value of flow rate of the liquid is implemented through using a movement velocity of the bubble calculated in combination of the flow rate of the liquid and the scanning velocity.

4. The method of claim 3 , wherein the calculating the minimum movement distance is implemented so that the minimum movement distance includes the radius of the bubble.

5. The method of claim 4 , wherein the shape of the irradiation area is rectangle, the scanning direction is along the short side of the rectangle.

6. The method of claim 5 , wherein the light pulses are scanned and irradiated in which the flow direction of the liquid is set orthogonal to the scanning direction at reciprocating scanning.

7. A method for manufacturing a semiconductor device, comprising:
determining a flow rate of a liquid and a scanning velocity of light pulses, by which a surface of a semiconductor substrate is scanned, by:
a characteristic dimension of irradiation area of the light pulses scanned and irradiated into the liquid, which contains impurity elements and moves on a surface of the semiconductor substrate at a fixed flow rate, the characteristic dimension being along a flow direction of the liquid,
an overlapping ratio, which is a ratio of a length, of an area overlapping between a prior and a subsequent irradiation area, in a scanning direction of the light pulses to a length of the irradiation area in the scanning direction, and
a radius of a bubble generated in the liquid; and

forming a semiconductor region by transporting the liquid on the surface of the semiconductor substrate at the determined flow rate while scanning and irradiating the light pulses onto the surface of the semiconductor substrate through the liquid at the determined scanning velocity to dope the impurity elements into a part of the inside of the semiconductor substrate.

8. The method of claim 7 , wherein the determining flow rate of the liquid includes:
calculating the minimum movement distance that the bubble moves along the flow direction of the liquid through the characteristic length, the overlapping ratio, the radius of the bubble, the angle between the scanning direction and the movement direction of the bubble within a repetition period of a sequence of two shots of the light pulse, the light pulses are irradiated into the liquid in scanning, the bubble is generated by a prior shot of the two shots;
calculating the minimum value of flow rate of the liquid, which is needed for the bubble to move the minimum movement distance; and
determining the flow rate of the liquid to a value larger than the calculated minimum value.

9. The method of claim 8 , wherein the calculating the minimum value of flow rate of the liquid is implemented through using a movement velocity of the bubble calculated in combination of the flow rate of the liquid and the scanning velocity.

10. The method of claim 9 , wherein the calculating the minimum movement distance is implemented so that the minimum movement distance includes the radius of the bubble.

11. The method of claim 10 , wherein the shape of the irradiation area is rectangle, the scanning direction is along the short side of the rectangle.

12. The method of claim 11 , wherein the light pulses are scanned and irradiated in which the flow direction of the liquid is set orthogonal to the scanning direction at reciprocating scanning.

Assignees

• Fuji Electric Co Ltd

Inventors

• Iguchi Kenichi

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P32/16 Primary

  between a solid phase and a liquid phase · CPC title

• H01L21/268

  Electricity · mapped topic

• H01L29/1608

  Electricity · mapped topic

• H01L21/228 Primary

  Electricity · mapped topic