Thin-film photoelectric converter

Patent metadata

Field	Value
Publication number	US-9711669-B2
Application number	US-99702709-A
Country	US
Kind code	B2
Filing date	Jun 3, 2009
Priority date	Jun 9, 2008
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series. The photoelectric conversion layer includes: a first semiconductor layer including a microcrystalline structure; and a second semiconductor layer including an amorphous structure, the second semiconductor layer being disposed so as to surround all side wall portions of the first semiconductor layer that extend in in-plane directions of the insulating light-transmitting substrate.

First claim

The invention claimed is:

1. A thin-film photoelectric converter comprising:
a first electrode layer formed of a transparent conductive material and whose surface includes first irregularities and second irregularities having a roughness larger than the first irregularities;
a photoelectric conversion layer having a PN junction or a PIN junction for photoelectric conversion; and
a second electrode layer formed of a conductive material that reflects light stacked in that order on an insulating light-transmitting substrate, wherein
the photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other,
adjacent ones of the plurality of photoelectric conversion cells are separated by the dividing grooves and electrically connected in series,
the photoelectric conversion layer comprises:
a first semiconductor layer including a microcrystalline structure having the PN junction or the PIN junction and formed in a first region; and
a second semiconductor layer formed of an amorphous structure having the PN junction or the PIN junction and formed in a second region surrounding the first region, the second semiconductor layer being disposed so as to surround all side wall portions of the first semiconductor layer,

the first semiconductor layer is partially provided on the first irregularities,
the second semiconductor layer is provided directly on the second irregularities, and
peripheral regions of the second irregularities are directly between the second semiconductor layer and the insulating light-transmitting substrate.

2. The thin-film photoelectric converter according to claim 1 , wherein
the first semiconductor layer is a microcrystalline silicon film, and
the second semiconductor layer is an amorphous silicon film.

3. The thin-film photoelectric converter according to claim 1 , wherein
the first semiconductor layer is formed by stacking a p-type microcrystalline silicon film, an i-type microcrystalline silicon film, and an n-type microcrystalline silicon film, and
the second semiconductor layer is configured to surround entire peripheral portions of the p-type microcrystalline silicon film, the i-type microcrystalline silicon film, and the n-type microcrystalline silicon film.

4. The thin-film photoelectric converter according to claim 1 , wherein
the first semiconductor layer is formed by stacking a p-type amorphous silicon film, an i-type amorphous silicon film, an n-type amorphous silicon film, a p-type microcrystalline silicon film, an i-type microcrystalline silicon film, and an n-type microcrystalline silicon film, and
the second semiconductor layer is configured to surround entire peripheral portions of the p-type amorphous silicon film, the i-type amorphous silicon film, the n-type amorphous silicon film, the p-type microcrystalline silicon film, the i-type microcrystalline silicon film, and the n-type microcrystalline silicon film.

5. The thin-film photoelectric converter according to claim 1 , wherein
a surface roughness of the first electrode layer is larger in the second region than in the first region.

6. The thin-film photoelectric converter according to claim 5 , wherein
the first electrode layer includes a metal layer, and
a surface roughness of the metal layer is larger in the second region than in the first region.

7. The thin-film photoelectric converter according to claim 1 , wherein
in the insulating light-transmitting substrate, a surface roughness of an edge region in an extending direction of the dividing grooves is larger than a surface roughness of other regions.

8. The thin-film photoelectric converter according to claim 1 , wherein the insulating light-transmitting substrate is flat.

Assignees

• Tokioka Hidetada
• Yamarin Hiroya
• Mitsubishi Electric Corp

Inventors

• Tokioka Hidetada
• Yamarin Hiroya

Classifications

• H01L31/03685

  Electricity · mapped topic

• Y02E10/545

  Microcrystalline silicon PV cells · CPC title

• H01L31/02366

  Electricity · mapped topic

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01L31/046

  Electricity · mapped topic