Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method

Patent metadata

Field	Value
Publication number	US-9309592-B2
Application number	US-67544908-A
Country	US
Kind code	B2
Filing date	Aug 28, 2008
Priority date	Aug 31, 2007
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

A crystallographically textured metallic substrate includes surfaces for connection and for receiving a thin layer deposit, and is made up of an alloy presenting a cubic crystalline system with centered faces and a predominantly cubic crystallographic texture {100}<001>, the receiving surface including grains mainly presenting crystallographic planes {100} parallel to the receiving surface. The alloy is iron-nickel with weight % relative to total weight: Ni≧30%, Cu≦15%, Cr≦15%, Co≦12%, Mn≦5%, S<0.0007%, P<0.003%, B<0.0005%, Pb<0.0001%, and in the alloy: 34%≦(Ni+Cr+Cu/2+Co/2+Mn). The alloy includes up to 1% in weight of one or several deoxidizing elements chosen among silicon, magnesium, aluminium and calcium, the rest of the elements in the alloy being iron and impurities.

First claim

The invention claimed is:

1. A crystallographically textured device comprising:
a crystallographically textured metallic substrate comprising a connection surface and a surface intended to receive a thin layer deposit;
a thin polycrystalline silicon-based layer deposited on said surface intended to receive a thin layer deposit, the thin polycrystalline silicon based layer having a crystallographic orientation (100) and (111),
the crystallographically textured metallic substrate being made up of an alloy having a cubic crystalline system with centred faces and a predominantly cubic crystallographic texture (100) <001>, the surface intended to receive a thin layer deposit of the crystallographically textured metallic substrate including grains mainly presenting crystallographic planes (100) parallel to the surface intended to receive a thin layer deposit, and having a roughness of R a less than 150 nm,
wherein the alloy is an iron-nickel alloy that comprises, as a % of weight relative to the total weight of the alloy:
Ni ≧30%,
Cu ≦15%,
Cr ≦15%,
Co ≦12%,
Mn ≦5%,
S <0.0007%,
P <0.003%,
B <0.0005%,
Pb <0.0001%,
the percentages in nickel, chromium, copper, cobalt and manganese are such that the alloy satisfies the following condition:
34%≦(Ni+Cr+Cu/2+Co/2+Mn)≦54%,

up to 1% of at least one deoxidizing element elected from the group consisting of silicon, magnesium, aluminium and calcium,
the balance being iron and impurities, wherein the impurities ≦1% , and
the average expansion coefficient of the alloy, α 20 100 , between 20° C. and 100° C., being greater than 10 −6 K −1 .

2. The crystallographically textured device according to claim 1 , wherein the crystallographically textured metallic substrate is thin with a thickness between 0.5 mm and 0.05 mm.

3. The crystallographically textured device according to claim 1 , wherein the grains on the surface intended to receive a thin layer deposit are etched in the form of a pyramid having planes (111) and speeds according to the planes (100) so as to form a blazed grating.

4. The crystallographically textured device according to claim 1 , wherein the crystalline lattice parameter of the crystallographically textured metallic substrate is the same or almost the same as that of the thin polycrystalline silicon-based layer.

5. The crystallographically textured device according to claim 1 wherein the average expansion coefficient of the alloy representing the crystallographically textured metallic substrate is similar to that of the thin polycrystalline silicon-based layer.

6. The crystallographically textured device according to claim 1 wherein the thin polycrystalline silicon-based layer presents a thickness less than 10 μm, and includes silicon crystals with a dimension between 0.1 μm and 2 μm.

7. A photovoltaic cell comprising a crystallographically textured device according to claim 1 .

8. The photovoltaic cell according to claim 7 wherein:
the crystallographically textured metallic substrate has a nickel content equal to 41% in weight relative to the alloy's total weight representing the metallic substrate , and
the thin polycrystalline silicon-based layer is doped,
a thin intrinsic polycrystalline silicon layer is deposited on the crystallographically textured device,
a thin doped polycrystalline silicon layer is deposited on the thin intrinsic polycrystalline silicon layer,
a thin layer of a transparent conductive oxide is deposited on the thin doped polycrystalline silicon layer, and
a metallic grid is placed on the thin transparent conductive oxide layer and including several elements including a central grid element.

9. The photovoltaic cell according to claim 8 wherein a connector is linked to the central grid element and emerges outside of the photovoltaic cell through the connection surface of the crystallographically textured metallic substrate, the connector passing through the crystallographically textured device, the thin intrinsic polycrystalline silicon layer, the thin doped poly crystalline silicon layer and the thin layer of a transparent conductive oxide, the connector being surrounded by an insulator extending from the connection surface of the crystallographically textured metallic substrate to the central grid element.

Assignees

• Reyal Jean-Pierre
• Reydet Pierre-Louis
• Roca Cabarrocas Pere
• Djeridane Yassine
• Arcelormittal Stainless And Nickel Alloys
• Ecole Polytech

Inventors

• Reyal Jean-Pierre
• Reydet Pierre-Louis
• Roca Cabarrocas Pere
• Djeridane Yassine

Classifications

• Y02E10/546

  Polycrystalline silicon PV cells · CPC title

• C23C16/0254

  Physical treatment to alter the texture of the surface, e.g. scratching or polishing · CPC title

• C23C16/24 Primary

  Deposition of silicon only · CPC title

• Y10T428/265

  1 mil or less · CPC title

• C22C38/08

  containing nickel {(C22C38/105 takes precedence)} · CPC title