Composite manganese nitride/low-K dielectric cap

Patent metadata

Field	Value
Publication number	US-9711456-B2
Application number	US-201514975729-A
Country	US
Kind code	B2
Filing date	Dec 19, 2015
Priority date	Dec 19, 2015
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A semiconductor device includes a metal-containing structure such as a copper-containing wire or plug and a composite capping layer formed over the metal-containing structure. The composite capping layer includes a manganese-containing layer disposed over the metal-containing structure, a silicon-containing low-k dielectric layer disposed over the manganese-containing layer, and an intermediate layer between the manganese-containing layer and the silicon-containing low-k dielectric layer. The intermediate layer is the reaction product of the manganese-containing layer and the silicon-containing low-k dielectric layer.

First claim

What is claimed as new is:

1. A semiconductor device comprising:
a metal-containing structure embedded in a dielectric material;
a manganese-containing layer disposed over the metal-containing structure, wherein a bottommost surface of the manganese-containing layer is coplanar with a topmost surface of the dielectric material;
a silicon-containing low-k dielectric layer disposed over the manganese-containing layer; and
an intermediate layer located between the manganese-containing layer and the silicon-containing low-k dielectric layer, wherein the intermediate layer has a bottommost surface in direct contact with a topmost surface of the manganese-containing layer and is a reaction product of the manganese-containing layer and the silicon-containing low-k dielectric layer.

2. The semiconductor device of claim 1 , wherein the metal-containing structure comprises a wire or a plug.

3. The semiconductor device of claim 1 , wherein the metal-containing structure comprises elemental copper or a copper alloy.

4. The semiconductor device of claim 1 , wherein the manganese-containing layer is disposed directly over the metal-containing structure.

5. The semiconductor device of claim 1 , wherein the manganese-containing layer comprises elemental manganese or manganese nitride.

6. The semiconductor device of claim 1 , wherein the manganese-containing layer thickness is 0.5 nm to 5 nm.

7. The semiconductor device of claim 1 , wherein the manganese-containing layer is an amorphous layer.

8. The semiconductor device of claim 1 , wherein the silicon-containing low-k dielectric layer comprises SiCN, SiCO, SiCNO, SiNO or SiOx (x≦2).

9. The semiconductor device of claim 1 , wherein the silicon-containing low-k dielectric layer is porous.

10. The semiconductor device of claim 1 , wherein the intermediate layer has a dielectric constant of less than 3.9.

11. The semiconductor device of claim 1 , wherein the intermediate layer comprises a compound selected from the group consisting of SiCNMnO, SiCMnO and SiMnO.

12. The semiconductor device of claim 1 , wherein the intermediate layer thickness is 0.5 nm to 25 nm.

13. A semiconductor device comprising:
a metal-containing structure;
a metal capping layer consisting of cobalt located directly on the metal-containing structure;
a manganese-containing layer located directly on the metal capping layer;
a silicon-containing low-k dielectric layer disposed over the manganese-containing layer; and
an intermediate layer located between the manganese-containing layer and the silicon-containing low-k dielectric layer, wherein the intermediate layer is a reaction product of the manganese-containing layer and the silicon-containing low-k dielectric layer.

Assignees

• IBM

Inventors

• Canaperi Donald F
• Nguyen Son V
• Nogami Takeshi
• Priyadarshini Deepika

Classifications

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/075

  of multilayered thin functional dielectric layers · CPC title

• H10W20/047

  by introducing additional elements therein · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title

• H10W20/425 Primary

  Barrier, adhesion or liner layers · CPC title