Method of forming non-continuous line pattern and non-continuous line pattern structure

Patent metadata

Field	Value
Publication number	US-9711358-B2
Application number	US-201715399715-A
Country	US
Kind code	B2
Filing date	Jan 5, 2017
Priority date	May 20, 2015
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

First claim

What is claimed is:

1. A method of forming a non-continuous line pattern, comprising:
providing a substrate;
forming a directed self-assembly (DSA) material layer on the substrate;
performing a phase separation process of the DSA material layer to form an ordered periodic pattern that includes a plurality of first polymer structures and a plurality of second polymer structures arranged alternately;
forming a first mask to cover a first portion of the ordered periodic pattern;
performing a first etching process to remove a portion of the first polymer structures exposed by the first mask;
removing the first mask;
forming a second mask to cover a second portion of the ordered periodic pattern, wherein an interval exists between adjacent boundaries of the second portion and the first portion of the ordered periodic pattern;
performing a second etching process to remove a portion of the second polymer structures exposed by the second mask; and
removing the second mask, wherein the remaining first polymer structures and the remaining second polymer structures are not connected to each other.

2. The method of forming the non-continuous line pattern according to claim 1 , further comprising forming a hard mask layer on the substrate before forming the DSA material layer.

3. The method of forming the non-continuous line pattern according to claim 2 , further comprising:
after removing the second mask, transferring a pattern of the remaining first polymer structures and the remaining second polymer structures to the hard mask layer for forming a patterned hard mask; and
performing a third etching process to the substrate to remove a portion of the substrate exposed by the patterned hard mask.

4. The method of forming the non-continuous line pattern according to claim 3 , further comprising removing the remaining first polymer structures and the remaining second polymer structures before performing the third etching process.

5. The method of forming the non-continuous line pattern according to claim 1 , wherein the phase separation process of the DSA material layer is carried out through an annealing process.

6. The method of forming the non-continuous line pattern according to claim 1 , further comprising forming a neutral bottom layer on the substrate before forming the DSA material layer.

7. The method of forming the non-continuous line pattern according to claim 1 , wherein the DSA material layer comprises block co-polymer (BCP).

8. The method of forming the non-continuous line pattern according to claim 1 , wherein the first polymer structures are hydrophilic, and the second polymer structures are hydrophobic.

9. The method of forming the non-continuous line pattern according to claim 1 , wherein patterns of the first mask and the second mask are respectively defined through a photolithography process by using a krypton fluoride (KrF) laser tool.

10. The method of forming the non-continuous line pattern according to claim 1 , wherein a width of the interval is about 10 nm to about 100 nm.

11. The method of forming the non-continuous line pattern according to claim 1 , wherein the first portion and the second portion of the ordered periodic pattern are not overlapped with each other.

Assignees

• United Microelectronics Corp

Inventors

• Chen Yu-Te
• Liou En-Chiuan
• Tseng Chia-Hsun
• Su Shin-Feng
• Hung Yu-Ting
• Tsai Meng-Lin

Classifications

• H10P76/2042

  using lasers · CPC title

• H10P76/408

  characterised by their sizes, orientations, dispositions, behaviours or shapes · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/286

  of organic materials · CPC title