Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas

Patent metadata

Field	Value
Publication number	US-9711353-B2
Application number	US-201615004004-A
Country	US
Kind code	B2
Filing date	Jan 22, 2016
Priority date	Feb 13, 2015
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

An aspect of the present disclosure resides in a method for manufacturing a compound semiconductor epitaxial substrate including a substrate and a compound semiconductor epitaxial layer disposed on the substrate, the method including providing the substrate, heating a carrier gas, preparing a mixed gas by mixing the heated carrier gas with at least a portion of a source gas that is a source for the compound semiconductor epitaxial layer, the source gas having a lower temperature than the heated carrier gas, and forming the compound semiconductor epitaxial layer on the substrate by supplying the mixed gas onto the substrate.

First claim

What is claimed is:

1. A method comprising:
providing a substrate in a reaction chamber;
heating a carrier gas in a heating chamber connected to the reaction chamber;
preparing a mixed gas in a mixing chamber by mixing the heated carrier gas with a source gas that is a source for a compound semiconductor, the source gas having a lower temperature than the heated carrier gas; and
forming a compound semiconductor epitaxial layer on the substrate by supplying the mixed gas onto the substrate,
wherein an angle formed between a surface of the substrate and a flow direction along which the mixed gas flows in the reaction chamber is 0° to 10°.

2. The method according to claim 1 , wherein the carrier gas is heated to a temperature of 1600° C. to 1750° C.

3. The method according to claim 1 ,
wherein the source gas is also supplied onto the substrate directly into the reaction chamber without being mixed with the carrier gas.

4. The method according to claim 1 , further comprising:
adding a dopant gas to the carrier gas before the heating of the carrier gas, wherein the heating the carrier gas includes heating the carrier gas together with the dopant gas.

5. The method according to claim 1 , wherein the carrier gas is hydrogen gas.

6. The method according to claim 1 , wherein at least a portion of the source gas is decomposed during the production of the mixed gas by the mixing of the heated carrier gas with the source gas.

7. The method according to claim 1 , wherein the substrate is a silicon carbide substrate and the compound semiconductor epitaxial layer is a silicon carbide epitaxial layer.

8. The method according to claim 1 , wherein the heating chamber, the mixing chamber and the reaction chamber are arranged in the flow direction.

9. The method according to claim 1 , wherein the source gas includes a silane gas and a gas including carbon.

Assignees

• Panasonic Corp

Inventors

• Kudou Chiaki

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title