Resist composition and patterning process

Patent metadata

Field	Value
Publication number	US-9709890-B2
Application number	US-201514847335-A
Country	US
Kind code	B2
Filing date	Sep 8, 2015
Priority date	Sep 18, 2014
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl and/or hydroxyl group optionally substituted with an acid labile group, an oxirane or oxetane compound having a hydrophilic group, and an acid generator onto a substrate, prebaking, exposing, baking, and developing in an organic solvent so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high sensitivity and high dissolution contrast during organic solvent development and forms a fine hole or trench pattern via positive/negative reversal.

First claim

The invention claimed is:

1. A resist composition comprising
a polymer comprising recurring units having a carboxyl group which may or may not be substituted with an acid labile group and/or a hydroxyl group which may or may not be substituted with an acid labile group excluding α-trifluoromethylhydroxy,
a compound having a hydrophilic group and an oxirane or oxetane ring, the hydrophilic group being selected from hydroxyl, lactone ring, lactam ring, sultone ring, sulfone, sulfonic acid ester, sulfonamide, carboxylic acid amide, nitro, cyano, thienyl, furyl, pyrrole, and acid anhydride groups, and
an acid generator,
wherein the compound having a hydrophilic group and an oxirane or oxetane ring is selected from the group consisting of compounds having the following formulae:

wherein R 3 is hydrogen, methyl, ethyl or propyl.

2. The resist composition of claim 1 wherein the recurring units having a carboxyl group which may or may not be substituted with an acid labile group and/or a hydroxyl group which may or may not be substituted with an acid labile group excluding α-trifluoromethylhydroxy are recurring units (a1) and (a2) having the general formula (2):

wherein R 5 and R 7 are hydrogen or methyl,
R 6 and R 9 are hydrogen or an acid labile group,
X 1 is a single bond, phenylene, naphthylene or —C(═O)—O—R 10 —, R 10 is a straight, branched or cyclic C 1 -C 10 alkylene group which may have ether, ester, lactone ring or hydroxyl, or phenylene or naphthylene group,
X 2 is a single bond, phenylene or naphthylene group which may contain nitro, cyano or halogen, or —C(═O)—O—R 11 —, —C(═O)—NH—R 11 —, —O—R 11 —, or —S—R 11 —, R 11 is a straight, branched or cyclic C 1 -C 10 alkylene group which may have ether, ester, lactone ring or hydroxyl, or a phenylene or naphthylene group which may have a straight, branched or cyclic C 1 -C 6 alkyl, alkoxy, acyl, acyloxy, C 2 -C 6 alkenyl, alkoxycarbonyl, C 6 -C 10 aryl, nitro, cyano, or halogen,
R 8 is a single bond, a straight, branched or cyclic C 1 -C 16 di or tri-valent aliphatic hydrocarbon group, or a phenylene group which may have ether or ester, 0≦a1≦1.0, 0≦a2≦1.0, 0<a1+a2≦1.0, and n is 1 or 2.

3. The resist composition of claim 1 wherein the acid generator is one capable of generating a sulfonic acid substituted with fluorine at α-position.

Assignees

• Shinetsu Chemical Co

Inventors

• Hatakeyama Jun
• Sagehashi Masayoshi
• Domon Daisuke
• Hasegawa Koji

Classifications

• H10P50/283

  by chemical means · CPC title

• G03F7/0382 Primary

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title