Aerosol deposition coating for semiconductor chamber components

US9708713B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9708713-B2
Application numberUS-201414282824-A
CountryUS
Kind codeB2
Filing dateMay 20, 2014
Priority dateMay 24, 2013
Publication dateJul 18, 2017
Grant dateJul 18, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method for coating a component for use in a semiconductor chamber for plasma etching includes providing the component and loading the component in a deposition chamber. A pressure in the deposition chamber is reduced to below atmospheric pressure. A coating is deposited on the component by spraying an aerosol comprising a suspension of a first type of metal oxide nanoparticle and a second type of metal oxide nanoparticle onto the component at approximately room temperature.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: loading a component into a deposition chamber, wherein the component is a component of a processing chamber; reducing a pressure of the deposition chamber below atmospheric pressure; and depositing a coating on the component by spraying an aerosol of ceramic nanoparticles comprising a mixture of a first rare earth metal oxide, a second rare earth metal oxide and a third metal oxide onto the component at approximately room temperature, wherein the coating has a particle crystal structure and wherein: the first rare earth metal oxide is Y 2 O 3 and the mixture comprises the Y 2 O 3 in a range of 40 mol % to less than 100 mol %; the second rare earth metal oxide is ZrO 2 and the mixture comprises the ZrO 2 in a range of greater than 0 mol % to less than 60 mol %; and the third metal oxide is Al 2 O 3 and the mixture comprises the Al 2 O 3 at a range of greater than 0 mol % to 40 mol %. 2. The method of claim 1 further comprising polishing the component such that a surface roughness of the component is less than about 0.2 microinch. 3. The method of claim 1 , wherein the aerosol has a velocity of greater than about 300 meters per second. 4. The method of claim 1 , wherein the aerosol further comprises a carrier gas of Nitrogen or Argon. 5. The method of claim 1 , further comprising heating the component after deposition of the coating to greater than about 1450 degrees C. for more than about 30 minutes to form a barrier layer between the component and the coating. 6. The method of claim 1 , further comprising depositing an additional coating on the component via a pressurized flow of an additional powder directed to the component in the deposition chamber at room temperature. 7. The method of claim 1 , wherein the component comprises Aluminum. 8. The method of claim 1 , wherein: the mixture comprises the Y 2 O 3 in a range of 50-75 mol %; the mixture comprises the ZrO 2 in a range of 10-30 mol %; and the mixture comprises the Al 2 O 3 in a range of 10-30 mol %. 9. The method of claim 1 , wherein: the mixture comprises the Y 2 O 3 in a range of 40 mol % to less than 100 mol %; the mixture comprises the ZrO 2 in a range of greater than 0 mol % to less than 60 mol %; and the mixture comprises the Al 2 O 3 in a range of greater than 0 mol % to less than 10 mol %. 10. The method of claim 1 , wherein: the mixture comprises the Y 2 O 3 in a range of 40-60 mol %; the mixture comprises the ZrO 2 in a range of greater than 30 mol % to 50 mol %; and the mixture comprises the Al 2 O 3 in a range of 10-20 mol %. 11. The method of claim 1 , wherein: the mixture comprises the Y 2 O 3 in a range of 40 mol % to less than 50 mol %; the mixture comprises the ZrO 2 in a range of 20-40 mol %; and the mixture comprises the Al 2 O 3 in a range of 20-40 mol %. 12. The method of claim 1 , wherein: the mixture comprises the Y 2 O 3 in a range of greater than 70 mol % to 90 mol %; the mixture comprises the ZrO 2 in a range of greater than 0 mol % to 20 mol %; and the mixture comprises the Al 2 O 3 in a range of 10-20 mol %. 13. The method of claim 1 , wherein: the mixture comprises the Y 2 O 3 in a range of 60-80 mol %; the mixture comprises the ZrO 2 in a range of greater than 0 mol % to 10 mol %; and the mixture comprises the Al 2 O 3 in a range of 20-40 mol %. 14. The method of claim 1 , wherein: the mixture comprises the Y 2 O 3 in a range of 40-60 mol %; the mixture comprises the ZrO 2 in a range of greater than 0 mol % to 20 mol %; and the mixture comprises the Al 2 O 3 in a range of greater than 30 mol % to 40 mol %. 15. A method comprising: loading a component into a deposition chamber, wherein the component is a component of a processing chamber; reducing a pressure of the deposition chamber below atmospheric pressure; and depositing a coating on the component by spraying an aerosol of ceramic nanoparticles consisting of a mixture of a first rare earth metal oxide and a second metal oxide onto the component at approximately room temperature, wherein the coating has a particle crystal structure and wherein: the first rare earth metal oxide is Er 2 O 3 ; and the second metal oxide is Al 2 O 3 . 16. A method comprising: loading a component into a deposition chamber, wherein the component is a component of a processing chamber; reducing a pressure of the deposition chamber below atmospheric pressure; and depositing a coating on the component by spraying an aerosol of ceramic nanoparticles consisting of a mixture of a first rare earth metal oxide and a second metal oxide onto the component at approximately room temperature, wherein the coating has a particle crystal structure and wherein: the first rare earth metal oxide is Gd 2 O 3 ; and the second metal oxide is Al 2 O 3 .

Assignees

Inventors

Classifications

  • C23C24/04Primary

    Impact or kinetic deposition of particles · CPC title

  • Metal or metal compound · CPC title

  • Construction (includes replacing parts of the apparatus) · CPC title

  • Gas supply means · CPC title

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What does patent US9708713B2 cover?
A method for coating a component for use in a semiconductor chamber for plasma etching includes providing the component and loading the component in a deposition chamber. A pressure in the deposition chamber is reduced to below atmospheric pressure. A coating is deposited on the component by spraying an aerosol comprising a suspension of a first type of metal oxide nanoparticle and a second typ…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification C23C24/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 18 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).