PVD apparatus and method with deposition chamber having multiple targets and magnets

Patent metadata

Field	Value
Publication number	US-9708706-B2
Application number	US-201113307242-A
Country	US
Kind code	B2
Filing date	Nov 30, 2011
Priority date	Nov 30, 2011
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

First claim

What is claimed is:

1. A method for depositing a film on a substrate, comprising:
providing a first target formed of a first material and a second target formed of a second material, wherein said first target includes a first associated magnet arrangement having north and south poles oriented in a plane parallel to a surface of said first target facing the substrate, and said second target includes a second associated magnet arrangement having north and south poles oriented in a plane parallel to a surface of said second target facing the substrate, wherein each of the first associated magnet arrangement and the second associated magnet arrangement are annular magnets having a north pole concentrically positioned within a south pole;
depositing a film by first applying a first power to said first target and a second power to said second target with said first and second powers forming an initial power ratio; and
continuing to deposit said film by providing power to said first target and said second target using a different power ratio.

2. The method as in claim 1 , wherein said applying a first power and applying a second power comprise separately powering said first target and said second target simultaneously using DC power.

3. The method as in claim 1 , wherein said providing a first target formed of a first material and a second target formed of a second material include disposing said first target and said second target in a single deposition chamber that further includes a stage for receiving a workpiece thereon, and wherein said depositing and said continuing to deposit include depositing said film onto a substrate disposed on said stage.

4. The method as in claim 1 , wherein said depositing a film produces a first thickness of said film with a first composition having a first ratio of said first and second target materials and said continuing to deposit produces a second thickness of said film with a second composition having a second ratio of said first and second target materials.

5. The method as in claim 4 , wherein said depositing produces said first thickness of said film being homogenous and said continuing to deposit produces said second thickness of said film being homogenous.

6. The method as in claim 1 , wherein said film is deposited on a substrate, said depositing a film produces a first thickness of said film with a first pattern including a film composition that varies spatially across said substrate, and said continuing to deposit produces a second thickness of said film with a second pattern having a film composition that varies spatially across said substrate, said first pattern being different than said second pattern.

7. The method as in claim 1 , further comprising rotating said first associated magnet arrangement with respect to said first target and rotating said second associated magnet arrangement with respect to said second target.

8. The method as in claim 1 , wherein said depositing a film comprises depositing said film on a substrate disposed in said at least one deposition chamber and said first target preferentially deposits first material in a first region of said substrate and said second target preferentially deposits second material in a second region of said substrate.

9. The method as in claim 1 , wherein the surface of the first target facing the substrate and the surface of the second target facing the substrate are coplanar.

10. A method for depositing a film on a substrate, comprising:
providing a deposition tool including at least one deposition chamber with a plurality of deposition target assemblies, each including a target member and at least one associated magnet having north and south poles oriented in a plane parallel to a surface of said target member facing the substrate, wherein each of the at least one associated magnets is an annular magnet having a north pole concentrically positioned within a south pole; and
depositing a film, by powering a first target assembly of said plurality of target assemblies with a first DC power and by powering a second target assembly of said plurality of target assemblies with a second DC power, said target members formed of different materials.

11. The method as in claim 10 , wherein said first DC power and said second DC power form an initial power ratio and further comprising further depositing using a different power ratio.

12. The method as in claim 11 , wherein said depositing a film produces a first thickness of said film including a first composition having a first ratio of target materials and said further depositing produces a second thickness of said film including a second composition having a second ratio of said target materials.

13. The method as in claim 10 , wherein said powering a first target assembly and said powering a second target assembly take place simultaneously.

14. The method as in claim 10 , wherein said depositing a film comprises depositing said film on a substrate disposed in said at least one deposition chamber and said first target assembly preferentially deposits first material in a first region of said substrate and said second target assembly preferentially deposits second material in a second region of said substrate.

15. The method as in claim 10 , wherein said plurality of target assemblies includes said first target member being round and separated from said second target member which is annular and surrounds said first target assembly.

16. The method as in claim 10 , wherein said plurality of target assemblies are concentrically arranged.

17. A method for depositing a film on a substrate, comprising:
providing a deposition tool including at least one deposition chamber with a plurality of deposition target assemblies, each including a target member and at least one associated magnet having north and south poles oriented in a plane parallel to a surface of said target member facing the substrate, wherein each of the at least one associated magnets is an annular magnet having a north pole concentrically positioned within a south pole; and
depositing a film, by powering a first target assembly of said plurality of target assemblies with a first DC power and by powering a second target assembly of said plurality of target assemblies with a second DC power thereby producing a first thickness of said film having a first composition having a first ratio of target materials, said target members formed of different materials, and
further depositing to produce a second thickness of said film having a second composition having a second ratio of said target materials.

18. The method as in claim 17 , wherein said depositing produces said first thickness of said film being homogenous and said further depositing produces said second thickness of said film being homogenous.

19. The method as in claim 17 , wherein said powering a first target assembly and said powering a second target assembly take place simultaneously.

20. The method as in claim 17 , wherein said first DC power and said second DC power form an initial power ratio and wherein said further depositing includes a different power ratio.

Assignees

• Kao Chung-En
• Tsai Ming-Chin
• Chou You-Hua
• Chiang Chen-Chia
• Lee Chih-Tsung
• Kuo Ming-Shiou
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Kao Chung-En
• Tsai Ming-Chin
• Chou You-Hua
• Chiang Chen-Chia
• Lee Chih-Tsung
• Kuo Ming-Shiou

Classifications

• H01J37/3417

  Arrangements · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• C23C14/352 Primary

  using more than one target (C23C14/56 takes precedence) · CPC title