Semiconductor device and manufacturing method thereof
US-2024404870-A1 · Dec 5, 2024 · US
US9708508B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9708508-B2 |
| Application number | US-201514733235-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2015 |
| Priority date | Sep 23, 2011 |
| Publication date | Jul 18, 2017 |
| Grant date | Jul 18, 2017 |
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A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
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What is claimed is: 1. A slurry composition, comprising: between about 0.5% by weight and about 6% by weight abrasive particles; between about 1 gm/liter and about 50 gm/liter of ferric nitrate; between about 0.1 ml/liter and about 100 ml/liter of surfactant anion; between about 0.003 ml/liter and about 3.05 ml/liter of octanol; and water as a diluent. 2. The slurry composition of claim 1 , wherein said surfactant anion is octyl sulfate. 3. The slurry composition of claim 1 , further comprising: between about 0.001 gm/liter and about 5 gm/liter of a chloride ion source; and between about 0.001 gm/liter and about 20 gm/liter of a sulfate ion source. 4. The slurry composition of claim 1 , further comprising: between about 0.1 gm/liter and about 5 gm/liter of a copper corrosion inhibitor. 5. The slurry composition of claim 1 , wherein there is less than 1% by weight in total of one or more of sodium citrate, sodium nitrate, Na 2 HPO 4 , sodium oxalate, and NaSiF 6 in said slurry composition. 6. The slurry composition of claim 1 , wherein there is less than 1% by weight of organic amine or ammonium ion (NH 4 +) in said slurry composition. 7. A slurry composition, consisting essentially of: between about 0.5% by weight and about 6% by weight abrasive particles; between about 1 gm/liter and about 50 gm/liter of ferric nitrate; between about 0.1 ml/liter and about 100 ml/liter of surfactant anion; between about 0.003 ml/liter and about 3.05 ml/liter of octanol; and water as a diluent. 8. The slurry composition of claim 7 , wherein said surfactant anion is octyl sulfate. 9. The slurry composition of claim 7 , wherein there is less than 1% by weight in total of one or more of sodium citrate, sodium nitrate, Na 2 HPO 4 , sodium oxalate, and NaSiF 6 in said slurry composition. 10. The slurry composition of claim 7 , wherein there is less than 1% by weight of organic amine or ammonium ion (NH 4 +) in said slurry composition. 11. The slurry composition of claim 7 , further comprising: between about 0.1 gm/liter and about 5 gm/liter of a copper corrosion inhibitor. 12. The slurry composition of claim 7 , further comprising: between about 0.001 gm/liter and about 5 gm/liter of a chloride ion source; and between about 0.001 gm/liter and about 20 gm/liter of a sulfate ion source. 13. A slurry composition, comprising: abrasive particles; ferric nitrate; a surfactant anion; octanol; and water as a diluent. 14. The slurry composition of claim 13 , wherein said surfactant anion is octyl sulfate. 15. The slurry composition of claim 13 , further comprising: a chloride ion source; and a sulfate ion source. 16. The slurry composition of claim 13 , further comprising: a copper corrosion inhibitor.
of conductive or resistive materials · CPC title
by smoothing of conductive parts, e.g. by planarisation · CPC title
Aqueous liquid suspensions · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
Aqueous dispersions (C09G1/02 takes precedence) · CPC title
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