Light emitting device packages and methods of forming the same

Patent metadata

Field	Value
Publication number	US-9705041-B2
Application number	US-201414186540-A
Country	US
Kind code	B2
Filing date	Feb 21, 2014
Priority date	Mar 4, 2013
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support structure. The support structure comprises: a first support electrode electrically connected to the first electrode of the light emitting structure; a second support electrode electrically connected to the second electrode of the light emitting structure, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and a support connection portion between the first support electrode and the second support electrode. The light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond a sidewall of at least one of the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes.

First claim

What is claimed is:

1. A light emitting device package, comprising:
a light emitting structure including semiconductor layers comprising:
a first semiconductor layer of a first conductivity type;
an active layer on the first semiconductor layer; and
a second semiconductor layer on the active layer, the second semiconductor layer of a second conductivity type that is different than the first conductivity type;
the first semiconductor layer, second semiconductor layer and active layer having substantially similar width dimensions;

a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the first and second electrodes being insulated from each other; and
a support structure, the first and second electrodes located between the light emitting structure and the support structure, the support structure comprising:
a first support electrode electrically connected to the first electrode;
a second support electrode electrically connected to the second electrode, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and
a support connection portion between the first support electrode and the second support electrode,

wherein the light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond outer sidewalls of both the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes, and
wherein the first and second electrodes are at a common surface of the light emitting structure.

2. The light emitting device package of claim 1 wherein the light emitting structure has a first width in the horizontal direction, and wherein the support structure has a second width in the horizontal direction and wherein the first width is greater than the second width.

3. The light emitting device package of claim 1 wherein the light emitting structure includes a lens unit package on, and at sidewalls of, the light emitting structure, and wherein the lens unit package has a first width in the horizontal direction and wherein the support structure has a second width in the horizontal direction and wherein the first width is greater than the second width.

4. The light emitting device package of claim 1 wherein the light emitting structure has a first width in a first horizontal direction, wherein the support structure has a second width in the first horizontal direction and wherein the second width is of a value that is in a range of about 0.65 to about 0.95 times the first width.

5. The light emitting device package of claim 2 wherein the first and second support electrodes have a combined third width in a first horizontal direction, wherein the support connection portion has a fourth width in the first horizontal direction and wherein the combined third width is greater than the fourth width.

6. The light emitting device package of claim 1 wherein the first and second support electrodes have a first height in a vertical direction and wherein the support connection portion has a second height in the vertical direction and wherein the first height is greater than the second height.

7. The light emitting device package of claim 1 wherein the first and second support electrodes have a first height in a vertical direction and wherein the light emitting structure has a third height in the vertical direction and wherein the first height is greater than the third height.

8. The light emitting device package of claim 1 wherein the first and second support electrodes are unitary between sidewalls thereof.

9. The light emitting device package of claim 1 wherein the support connection portion comprises a first material, and wherein a region at a sidewall of the at least one first and second support electrodes and below the protrusion portion is devoid of the first material.

10. The light emitting device package of claim 1 wherein the support connection portion comprises a first material, and wherein the first material is formed on outer sidewalls of the at least one first and second support electrodes.

11. The light emitting device package of claim 1 further comprising an insulating layer between inner sidewalls of the first and second support electrodes and the support connection portion.

12. The light emitting device package of claim 1 further comprising an insulating layer at outer sidewalls of the first and second support electrodes.

13. The light emitting device package of claim 1 wherein regions of outer sidewalls of the first and second support electrodes are devoid of a material coating.

14. The light emitting device package of claim 1 wherein the first support electrode and the second support electrode extend in a first horizontal direction of extension and are parallel to each other in the first horizontal direction.

15. The light emitting device package of claim 1 wherein the first support electrode and the second support electrode are substantially rectangular in horizontal cross section, and wherein at least two sidewalls of at least one of the first support electrode and the second support electrode are covered by the support connection portion.

16. The light emitting device package of claim 1 wherein the first support electrode and the second support electrode have a tapered cross-section so that they are wider at a bottom portion distal the light emitting structure and narrower at a top portion proximal the light emitting structure.

17. The light emitting device package of claim 16 wherein the support connection portion has a tapered cross-section that is wider at a top portion proximal the light emitting structure and narrower at a bottom portion distal the light emitting structure.

18. The light emitting device package of claim 1 wherein at least one of the first support electrode and the second support electrode includes an extension portion, and wherein the support connection portion is on the extension portion.

19. The light emitting device package of claim 1 further comprising a wavelength conversion layer on the second semiconductor layer.

20. The light emitting device package of claim 1 further comprising an electrode via extending in a vertical direction between the second electrode and the second semiconductor layer.

21. The light emitting device package of claim 1 wherein the light emitting structure comprises a light emitting nano-structure.

22. The light emitting device package of claim 1 wherein the first and second electrodes of the light emitting structure are on the support structure.

23. A light emitting device package, comprising:
a light emitting structure including semiconductor layers comprising:
a first semiconductor layer of a first conductivity type;
an active layer on the first semiconductor layer; and
a second semiconductor layer of a second conductivity type on the active layer;
the first semiconductor layer, second semiconductor layer and active layer having substantially similar width dimensions;
a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the first and second electrodes being insulated from each other; and

a support structure, the first and second electrodes located between the light emi

Assignees

• Samsung Electronics Co Ltd
• Samsung Electronics Co Ltd

Inventors

• Im Sung Jun
• Cho Dong Hyun
• Sohn Jong Rak
• Kwon Yong Min

Classifications

• H10W72/20

  Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title

• H01L2224/13

  Electricity · mapped topic

• H01L33/382 Primary

  Electricity · mapped topic

• H01L33/62

  Electricity · mapped topic

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title