Photovoltaic device

Patent metadata

Field	Value
Publication number	US-9705022-B2
Application number	US-201414470114-A
Country	US
Kind code	B2
Filing date	Aug 27, 2014
Priority date	Mar 2, 2012
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

This photovoltaic device is provided with a crystalline semiconductor substrate, and a first amorphous layer formed on the main surface of the substrate. At the interface between the substrate and the first amorphous layer, electrical conductivity can be improved while suppressing an increase in recombination centers, and power generation efficiency can be improved by having a p-type dopant density profile that decreases stepwise in the film thickness direction from the vicinity of the interface with the substrate.

First claim

The invention claimed is:

1. A photovoltaic device comprising:
a crystalline semiconductor substrate; and
an amorphous semiconductor layer formed directly on a main surface of the substrate, wherein
the amorphous semiconductor layer has a portion having a p-type dopant density profile decreasing stepwise in a film thickness direction from the vicinity of an interface between the substrate and the amorphous semiconductor layer,
the p-type dopant density profile comprising:
a top portion having a maximum density in the vicinity of the interface,
a bottom portion having a minimum density at a location father from the interface
than the top portion is from the interface, and
two inflection points between the top portion and the bottom portion;

wherein the amorphous semiconductor layer has a thickness less than or equal to 35 nm; and
the portion having the p-type dopant density profile has a thickness of 25 nm or less.

2. The photovoltaic device according to claim 1 , wherein
the p-type dopant density within a range of 2 nm from the vicinity of the interface between the substrate and the amorphous semiconductor layer is equal to or greater than 1×10 18 /cm 3 and equal to or less than 5×10 19 /cm 3 .

3. The photovoltaic device according to claim 1 , wherein
an oxygen density within a range of 2 nm from the vicinity of the interface between the substrate and the amorphous semiconductor layer is equal to or greater than 1×10 19 /cm 3 .

4. The photovoltaic device according to claim 1 , wherein
the amorphous semiconductor layer has an oxygen density profile decreasing stepwise in the film thickness direction from the vicinity of the interface between the substrate and the amorphous semiconductor layer.

5. The photovoltaic device according to claim 3 , wherein
an oxygen density within a range of 2 nm from the vicinity of the interface between the substrate and the amorphous semiconductor layer is equal to or greater than ten times and less than 1000 times the p-type dopant density.

6. The photovoltaic device according to claim 1 , wherein
a range of a film thickness at the stepwise portion of the p-type dopant density profile is equal to or greater than 2 nm and equal to or less than 5 nm.

7. The photovoltaic device according to claim 1 , wherein
the p-type dopant density at the stepwise portion of the p-type dopant density profile is equal to or greater than 5×10 17 /cm 3 and less than 5×10 18 /cm 3 .

Assignees

• Sanyo Electric Co
• Panasonic Ip Man Co Ltd

Inventors

• Tsunomura Yasufumi
• Ogane Akiyoshi
• Baba Toshiaki

Classifications

• H01L31/0747 Primary

  Electricity · mapped topic

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/202

  Electricity · mapped topic

• H01L31/0288

  Electricity · mapped topic