Avalanche photodiode
US-2024204127-A1 · Jun 20, 2024 · US
Solar cell
US9196780B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196780-B2 |
| Application number | US-201414582505-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 24, 2014 |
| Priority date | Jun 29, 2012 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.
First claim
Opening claim text (preview).
The invention claimed is: 1. A solar cell comprising: a substrate; a first amorphous semiconductor layer arranged at a first region of the substrate and being of a first conductivity type; a second amorphous semiconductor layer arranged at a second region of the substrate and being of a second conductivity type; a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer; a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the second conductivity type; a first crystalline semiconductor layer arranged between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the first conductivity type; and a second crystalline semiconductor layer arranged between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the second conductivity type. 2. The solar cell according to claim 1 , wherein the first and second crystalline semiconductor layers are made of a microcrystalline semiconductor. 3. The solar cell according to claim 1 , wherein the one conductivity type is an n-type, and the other conductivity type is a p-type. 4. The solar cell according to claim 1 , further comprising: a second substantially intrinsic i-type amorphous semiconductor layer provided between the first amorphous semiconductor layer and the substrate. 5. The solar cell according to claim 1 , wherein the first crystalline semiconductor layer has a thickness of about 1 nm to 30 nm. 6. The solar cell according to claim 1 , wherein the first crystalline semiconductor layer has a thickness of about 1 nm to 15 nm. 7. The solar cell according to claim 1 , wherein the second crystalline semiconductor layer has a thickness of about 1 nm to 30 nm. 8. The solar cell according to claim 1 , wherein the second crystalline semiconductor layer has a thickness of about 1 nm to 15 nm. 9. The solar cell according to claim 2 , wherein the microcrystalline semiconductor is made substantially of semiconductor crystal grains. 10. The solar cell according to claim 2 , wherein the second crystalline semiconductor includes a semiconductor amorphous region and a semiconductor crystal grains region.
Assignees
Inventors
Classifications
- H10F77/148Primary
Shapes of potential barriers · CPC title
The active layers comprising only Group IV materials · CPC title
the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells · CPC title
Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title
- H10F10/17Primary
Photovoltaic cells having only PIN junction potential barriers · CPC title
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Frequently asked questions
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- What does patent US9196780B2 cover?
- Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above…
- Who is the assignee on this patent?
- Sanyo Electric Co, Panasonic Ip Man Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F77/148. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).