Inspection method and template
US-2016305892-A1 · Oct 20, 2016 · US
Semiconductor structure and method for forming the same
US9704803B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9704803-B2 |
| Application number | US-201514857383-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 17, 2015 |
| Priority date | Sep 17, 2015 |
| Publication date | Jul 11, 2017 |
| Grant date | Jul 11, 2017 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor structure and a method for forming the semiconductor structure are provided. In various embodiments, the method for forming a semiconductor structure includes following steps. A structure on a semiconductor substrate is received, which the structure includes at least two conductive lines and a shorting bridge, and the conductive lines electrically connected to each other through the shorting bridge. The shorting bridge is insulated to make the conductive lines electrically isolated to each other.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure, comprising: at least two conductive lines disposed on a semiconductor substrate; and an insulated shorting bridge sandwiched between and in contact with the conductive lines. 2. The semiconductor structure of claim 1 , wherein the conductive lines have a non-conductive surface. 3. The semiconductor structure of claim 2 , wherein a thickness of the insulated shorting bridge is less than or equal to a thickness of the non-conductive surface of the conductive lines. 4. The semiconductor structure of claim 1 , wherein the conductive lines have a cross section comprising a trapezoid or a rectangle. 5. The semiconductor structure of claim 2 , wherein the insulated shorting bridge and the non-conductive surfaces of the conductive lines are co-planar. 6. The semiconductor structure of claim 3 , wherein the thickness of the non-conductive surface is about 30 Å to about 150 Å. 7. The semiconductor structure of claim 2 , wherein the non-conductive surface and the insulated shorting bridge comprise a same material. 8. The semiconductor structure of claim 7 , wherein the same material comprises copper oxide, copper nitride, aluminum oxide or aluminum nitride. 9. The semiconductor structure of claim 8 , wherein the copper oxide comprises Cu x O y , x is 1 or 2, and y is 1 or 2.
Assignees
Inventors
Classifications
Adapting interconnections, e.g. making engineering charges, repairing · CPC title
Shapes or dispositions of interconnections · CPC title
Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title
Capacitive arrangements or effects of, or between wiring layers · CPC title
Interconnections over air gaps, e.g. air bridges · CPC title
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Frequently asked questions
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- What does patent US9704803B2 cover?
- A semiconductor structure and a method for forming the semiconductor structure are provided. In various embodiments, the method for forming a semiconductor structure includes following steps. A structure on a semiconductor substrate is received, which the structure includes at least two conductive lines and a shorting bridge, and the conductive lines electrically connected to each other through…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W20/065. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).