Method of dicing a wafer

Patent metadata

Field	Value
Publication number	US-9704748-B2
Application number	US-201514751035-A
Country	US
Kind code	B2
Filing date	Jun 25, 2015
Priority date	Jun 25, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

First claim

What is claimed is:

1. A method of dicing a wafer, the method comprising:
providing a wafer; and
etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer, wherein each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer, wherein the kerf line segments comprise N parallel kerf line segments where N is an integer that is equal to or greater than 3, wherein one or more of the plurality of wafer edge areas are singulated by the kerf lines that each extend between the one of the two endpoints of every Mth one of the N parallel kerf line segments and the circumferential edge of the wafer, and wherein M is an integer that is equal to or greater than 2 and equal to or less than N.

2. The method of claim 1 , wherein one or more of the plurality of wafer edge areas are singulated by the kerf lines that each intersect the circumferential edge of the wafer at a point that is collinear with the two endpoints of the one of the kerf line segments.

3. The method of claim 1 , wherein one or more of the plurality of wafer edge areas are singulated by the kerf lines that are radial with respect to the circumferential edge of the wafer.

4. The method of claim 1 , wherein the plurality of wafer edge areas are singulated by the kerf lines that define an interlocking joint between adjacent ones of the plurality of wafer edge areas, wherein the interlocking joint limits movement between the adjacent ones of the plurality of wafer edge areas to be within a range that corresponds to a width of the kerf lines.

5. The method of claim 4 , wherein a width of the kerf lines is equal to or greater than a width of one or more of the kerf line segments.

6. The method of claim 4 , wherein the interlocking joint comprises male and female members that form a contiguous boundary between the adjacent ones of the plurality of wafer edge areas.

7. The method of claim 4 , wherein the interlocking joint comprises a singulated segment that forms an interlocked and co-planar relationship with the adjacent ones of the plurality of wafer edge areas.

8. The method of claim 1 , wherein at least one of the plurality of wafer edge areas includes human-readable or machine-readable information within a region that is singulated by at least one kerf line that intersects at least one of the kerf lines that each extend between the one of the two endpoints of the one of the kerf line segments and the circumferential edge of the wafer.

9. A wafer comprising:
a plurality of singulated die between kerf line segments defined within an interior region of the wafer; and
a plurality of singulated wafer edge areas between the kerf line segments and the circumferential edge of the wafer, wherein the kerf line segments comprise N parallel kerf line segments where N is an integer that is equal to or greater than 3, wherein one or more of the plurality of wafer edge areas are singulated by the kerf lines that each extend between the one of the two endpoints of every Mth one of the N parallel kerf line segments and the circumferential edge of the wafer, wherein M is an integer that is equal to or greater than 2 and equal to or less than N, and wherein each one of the plurality of wafer edge areas is between kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

10. The wafer of claim 9 , wherein one or more of the plurality of singulated wafer edge areas are between the kerf lines that each intersect the circumferential edge of the wafer at a point that is collinear with the two endpoints of the one of the kerf line segments.

11. The wafer of claim 9 , wherein the kerf line segments comprise N parallel kerf line segments where N is an integer that is equal to or greater than 3, wherein one or more of the plurality of singulated wafer edge areas are between the kerf lines that each extend between the one of the two endpoints of every Mth kerf line segment and the circumferential edge of the wafer, and wherein M is an integer that is equal to or greater than 2 and equal to or less than N.

12. The wafer of claim 9 , wherein one or more of the plurality of singulated wafer edge areas are between the kerf lines that are radial with respect to the circumferential edge of the wafer.

13. The wafer of claim 9 , wherein a radial distance between the one of the two endpoints of the one of the kerf line segments and the circumferential edge of the wafer is equal to or greater than 2 mm.

14. The wafer of claim 9 , wherein the plurality of singulated wafer edge areas are between the kerf lines that define an interlocking joint between adjacent ones of the plurality of singulated wafer edge areas, wherein the interlocking joint limits movement between the adjacent ones of the plurality of singulated wafer edge areas to be within a range that corresponds to a width of the kerf lines.

15. The wafer of claim 14 , wherein the interlocking joint comprises male and female members that form a contiguous boundary between the adjacent ones of the plurality of singulated wafer edge areas.

16. The wafer of claim 15 , wherein the male and female members comprise a male trapezoidal segment and a female trapezoidal segment.

17. The wafer of claim 14 , wherein the interlocking joint comprises a singulated segment that forms an interlocked and co-planar relationship between the adjacent ones of the plurality of wafer edge areas.

18. The wafer of claim 14 , wherein the width of the kerf lines is equal to or greater than a width of one or more of the kerf line segments.

19. The wafer of claim 9 , wherein at least one of the plurality of singulated wafer edge areas includes singulated human-readable or machine-readable information within a region adjacent to at least one kerf line that intersects at least one of the kerf lines that each extend between the one of the two endpoints of the one of the kerf line segments and the circumferential edge of the wafer.

20. A lithography mask comprising:
a first feature set for patterning a material on a wafer to define kerf line segments within an interior region of the wafer; and
a second feature set for patterning the material on the wafer to define kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer, wherein the kerf line segments comprise N parallel kerf line segments where N is an integer that is equal to or greater than 3, wherein one or more of the plurality of wafer edge areas are singulated by the kerf lines that each extend between the one of the two endpoints of every Mth one of the N parallel kerf line segments and the circumferential edge of the wafer, wherein M is an integer that is equal to or greater than 2 and equal to or less than N, wherein the first feature set defines die to be singulated, and the second feature set defines a plurality of wafer edge areas to be singulated.

21. The lithography mask of claim 20 , wherein the second feature set defines one or more of the kerf lines that each intersect the circumferential edge of the wafer at a point that is collinear with the two endpoints of the one of the kerf line segments.

22. The lithography mask of claim 20 , wherein th

Assignees

• Infineon Technologies Ag

Inventors

• Ortner Joerg
• Roesner Michael
• Stranzl Gudrun
• Rothmaler Rudolf

Classifications

• H10P50/693

  characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• G03F1/38

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title