Integrated transformer

Patent metadata

Field	Value
Publication number	US-9704647-B2
Application number	US-201514680699-A
Country	US
Kind code	B2
Filing date	Apr 7, 2015
Priority date	May 5, 2010
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A transformer comprising primary and secondary windings is disclosed. Each winding has first and second metal capping layers coupled together electrically in parallel by a metal connector passing through a substrate lying between the first and second metal capping layers.

First claim

The invention claimed is:

1. A method for manufacturing a transformer comprising primary and secondary windings, the method comprising, for each winding, providing first and second metal capping layers, and coupling the first and second metal capping layers together electrically in parallel by forming a metal connector passing through a substrate lying between the first and second metal capping layers.

2. A method according to claim 1 , wherein, for each winding, the metal connector is formed by making first and second trenches through the substrate and depositing metal within the trenches to form a continuous layer from the top to the bottom surface of the substrate through the trench.

3. A method according to claim 2 , wherein the first and second trenches are made using an anisotropic etching process.

4. A method according to claim 2 , wherein the first and second trenches are made using a combination of an anisotropic etching process and grinding the substrate to reduce its thickness.

5. A method according to claim 2 , wherein the metal is deposited within the trenches using a vapor deposition process or by electrolytic growth.

6. A method according to claim 1 , wherein the metal capping layers are provided using a vapor deposition process or by electrolytic growth.

7. A method according to claim 5 , wherein the substrate is a silicon substrate and prior to depositing metal within the trenches and/or providing the metal capping layers, an oxidation step is performed followed by silicon nitride deposition to isolate the metal from the silicon substrate.

8. A method according to claim 5 , wherein physical vapor deposition of a titanium-copper alloy is performed to enable the electrolytic growth of copper.

9. The method of claim 1 , wherein providing the first and second metal capping layers of the primary winding includes providing each of the metal capping layers of the primary winding as a continuous winding, with the metal connector forming the primary winding by connecting the continuous winding of the first metal capping layer with the continuous winding of the second metal capping layer.

10. The method of claim 9 , wherein providing the first and second metal capping layers of the secondary winding includes providing each of the metal capping layers of the secondary winding as a continuous winding, with the metal connector of the secondary winding forming the secondary winding by connecting the continuous winding of the first metal capping layer with the continuous winding of the second metal capping layer.

11. The method of claim 1 , further including providing the primary winding as two vertically stacked primary windings.

12. The method of claim 11 , wherein providing the two vertically stacked primary windings includes providing the two vertically stacked primary windings in separate dies.

13. The method of claim 11 , wherein providing the primary winding as two vertically stacked primary windings includes providing, for each of the two primary windings, the first and second metal capping layers of the winding as respective windings connected via the metal connector of the winding.

14. A method comprising:
forming a primary winding by forming a first metal capping layer winding, forming a second metal capping layer winding that winds in parallel with the first metal capping layer winding, and connecting the first and second metal capping layer windings by forming a first metal connector passing through a substrate between the first and second metal capping layer windings; and
forming a secondary winding by forming a third metal capping layer winding, forming a fourth metal capping layer winding that winds in parallel with the third metal capping layer winding, and connecting the third and fourth metal capping layer windings by forming a second metal connector passing through a substrate between the third and fourth metal capping layer windings.

15. The method of claim 14 , wherein:
forming the first and third metal capping layer windings includes forming the windings on a first surface of the substrate; and
forming the second and fourth metal capping layer windings includes forming the windings on a second surface of the substrate.

16. The method of claim 14 ,
wherein forming the first and third metal capping layer windings includes forming the windings on a first surface of a substrate,
further including forming the substrate on the first and third metal capping layer windings,
wherein forming the first and second metal connectors include forming trenches in the substrate on the first and third metal capping layer windings and that expose the first and third metal capping layer windings, and filling the trench with a metal that forms the connectors, and
forming the second and fourth metal capping layer windings includes forming the windings an upper surface of the substrate that is on the first and third metal capping layer windings and in contact with the connectors.

Assignees

• Nxp Bv

Inventors

• Duplessis Magali
• Tesson Olivier

Classifications

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H01F2017/0086

  on semiconductor substrate · CPC title

• B23K1/0016

  Soldering of electronic components · CPC title

• H01F5/00

  Coils (superconducting coils H01F6/06; fixed inductances of the signal type H01F17/00) · CPC title

• Y10T29/49071

  by winding or coiling · CPC title