Onium salt, resist composition, and patterning process

Patent metadata

Field	Value
Publication number	US-9703193-B2
Application number	US-201615139780-A
Country	US
Kind code	B2
Filing date	Apr 27, 2016
Priority date	Apr 28, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

An onium salt having an anion moiety of a specific structure is an effective photoacid generator. A resist composition comprising the onium salt has the advantages of compatibility and reduced acid diffusion and forms a pattern with a good balance of sensitivity and MEF, rectangularity, and minimal defects.

First claim

The invention claimed is:

1. An onium salt having the formula (1):

wherein R 1 is a straight, branched or cyclic C 1 -C 40 monovalent hydrocarbon group which may contain a heteroatom selected from the group consisting of oxygen, sulfur and nitrogen atoms, L 1 is a carbonyl bond, sulfonyl bond or sulfinyl bond, L 2 is a single bond, ether bond, carbonyl bond, ester bond, amide bond, sulfide bond, sulfinyl bond, sulfonyl bond, sulfonic acid ester bond, sulfinamide bond, sulfonamide bond, carbamate bond or carbonate bond, A 1 is hydrogen, halogen or a straight, branched or cyclic C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, X a and X b are each independently hydrogen, fluorine or trifluoromethyl, with the proviso that at least one of X a and X b is a substituent group other than hydrogen, k 1 is an integer of 1 to 4, and M + is an onium cation.

2. The onium salt of claim 1 wherein L 1 is a sulfonyl bond.

3. The onium salt of claim 2 wherein L 2 is a single bond and A 1 is hydrogen, fluorine or trifluoromethyl.

4. A resist composition comprising the onium salt of claim 1 .

5. The resist composition of claim 4 , further comprising a polymer comprising recurring units having the formula (2) and recurring units having the formula (3):

wherein R A is hydrogen, fluorine, methyl or trifluoromethyl, Z A is a single bond, phenylene group, naphthylene group or —C(═O)—O—Z′—, Z′ is a straight, branched or cyclic C 1 -C 10 alkylene group which may contain a hydroxyl radical, ether bond, ester bond or lactone ring, or phenylene group or naphthylene group, X A is an acid labile group, and Y A is hydrogen or a polar group having at least one structure selected from the group consisting of hydroxyl, cyano, carbonyl, carboxyl, ether bond, ester bond, sulfonic acid ester bond, carbonate bond, lactone ring, sultone ring and carboxylic anhydride.

6. The resist composition of claim 4 , further comprising a photoacid generator other than the onium salt.

7. The resist composition of claim 6 wherein the other photoacid generator has the formula (4) or (5):

wherein R 100 , R 200 and R 300 are each independently a straight, branched or cyclic C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, any two or more of R 100 , R 200 and R 300 may bond together to form a ring with the sulfur atom to which they are attached, X − is an anion selected from the formulae (4A) to (4D):

wherein R fa , R fb1 , R fb2 , R fc1 , R fc2 and R fc3 are each independently fluorine or a straight, branched or cyclic C 1 -C 40 monovalent hydrocarbon group which may contain a heteroatom, or a pair of R fb1 and R fb2 , or R fc1 and R fc2 may bond together to form a ring with the carbon atom to which they are attached and any intervening atoms, R fd is a straight, branched or cyclic C 1 -C 40 monovalent hydrocarbon group which may contain a heteroatom,

wherein R 400 and R 500 are each independently a straight, branched or cyclic C 1 -C 30 monovalent hydrocarbon group which may contain a heteroatom, R 600 is a straight, branched or cyclic C 1 -C 30 divalent hydrocarbon group which may contain a heteroatom, any two or more of R 400 , R 500 and R 600 may bond together to form a ring with the sulfur atom to which they are attached, L is a single bond or a straight, branched or cyclic C 1 -C 20 divalent hydrocarbon group which may contain a heteroatom, X 1 , X 2 , X 3 and X 4 are each independently hydrogen, fluorine or trifluoromethyl, with the proviso that at least one of X 1 , X 2 , X 3 and X 4 is a substituent group other than hydrogen.

8. The resist composition of claim 4 , further comprising an amine compound.

9. The resist composition of claim 4 , further comprising a compound having the formula (6) or (7):

wherein R 151 , R 152 and R 153 are each independently hydrogen, halogen exclusive of fluorine, or a straight, branched or cyclic C 1 -C 40 monovalent hydrocarbon group which may contain a heteroatom, any two or more of R 151 , R 152 and R 153 may bond together to form a ring with the carbon atom to which they are attached, R 154 is a straight, branched or cyclic C 1 -C 40 monovalent hydrocarbon group which may contain a heteroatom, and M + is an onium cation.

10. The resist composition of claim 4 , further comprising a surfactant which is insoluble or substantially insoluble in water and soluble in alkaline developer, and/or a surfactant which is insoluble or substantially insoluble in water and alkaline developer.

11. A pattern forming process comprising the steps of applying the resist composition of claim 4 onto a substrate, prebaking to form a resist film, exposing a selected region of the resist film to KrF excimer laser, ArF excimer laser, EB or EUV, baking, and developing the exposed resist film in a developer.

12. The pattern forming process of claim 11 wherein the developing step uses an alkaline aqueous solution as the developer, thereby forming a positive pattern in which an exposed region of the resist film is dissolved away and an unexposed region of the resist film is not dissolved.

13. The pattern forming process of claim 11 wherein the developing step uses an organic solvent as the developer, thereby forming a negative pattern in which an unexposed region of the resist film is dissolved away and an exposed region of the resist film is not dissolved.

14. The pattern forming process of claim 13 wherein the organic solvent is at least one solvent selected from the group consisting of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, pentyl acetate, butenyl acetate, isopentyl acetate, propyl formate, butyl formate, isobutyl formate, pentyl formate, isopentyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, pentyl lactate, isopentyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate.

15. The process of claim 11 wherein the exposure step is carried out by immersion lithography while a liquid having a refractive index of at least 1.0 is held between the resist film and a projection lens.

16. The process of claim 15 , further comprising the step of coating a protective film on the resist film prior to the exposure step, wherein immersion lithography is carried out while the liquid is held between the protective film and the projection lens.

17. The onium salt of claim 1 , wherein the heteroatom is an oxygen atom.

Assignees

• Shinetsu Chemical Co

Inventors

• Fujiwara Takayuki
• Ohashi Masaki
• Taniguchi Ryosuke

Classifications

• C07J41/0055

  the 17-beta position being substituted by an uninterrupted chain of at least three carbon atoms which may or may not be branched, e.g. cholane or cholestane derivatives, optionally cyclised, e.g. 17-beta-phenyl or 17-beta-furyl derivatives · CPC title

• C07J31/006

  not covered by C07J31/003 · CPC title

• C07D493/18

  Bridged systems · CPC title

• C07D309/10

  Oxygen atoms · CPC title

• C07D307/33

  in position 2, the oxygen atom being in its keto or unsubstituted enol form · CPC title