Method of calculating a shift vale of a cell contact

Patent metadata

Field	Value
Publication number	US-9703189-B2
Application number	US-201514685620-A
Country	US
Kind code	B2
Filing date	Apr 14, 2015
Priority date	Sep 5, 2014
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

First claim

What is claimed is:

1. A method of making a lithography mask, the method comprising:
forming an array of contact openings in each of at least one cell block of a substrate by performing a lithography process using a lithography mask;
imaging the substrate to produce an actual image of at least one of the cell blocks;
superimposing data representative of the actual image of the cell block with data representative of a target image including target cells corresponding to the contact openings whose images appear in the actual image of the cell block to thereby obtain superimposed data, and
using the superimposed data to derive preliminary shift values of the contact openings whose images appear in a reference region of the actual image of the cell block, wherein the reference region corresponds to a central region of the cell block, and the preliminary shift values each correspond to a measure of offset between a respective one of images of the contact openings in the reference region and a corresponding target cell of the target image;
discounting the preliminary shift values of the contact openings whose images appear in the reference region;
using the discounted preliminary shift values to calculate actual shift values of the contact openings whose images appear in a correction region of the actual image of the cell block, wherein the correction region corresponds to a peripheral region of the cell block; and
performing lithography mask fabrication based on the actual shift values of the contact openings whose images appear in the correction region.

2. The method of claim 1 , wherein the actual image is produced using scanning electron microscopy.

3. The method of claim 1 , wherein discounting the preliminary shift values of the contact openings whose images appear in the reference region comprises weighting the preliminary shift values with values such that the preliminary shift values approach 0.

4. The method of claim 1 , wherein a plurality of blocks of the contact openings are imaged to produce actual images of respective blocks of contact openings,
sets of actual shift values are calculated in the manner claimed in claim 1 for the contact openings whose images appear in the correction regions of the actual images of the blocks of contact openings, respectively,
the set of actual shift values are averaged with one another to produce a set of average shift values, and
the lithography mask fabrication is based on the set of average shift values.

5. The method of claim 1 , wherein the lithography mask fabrication comprises correcting the lithography mask used to produce the contact openings.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yang Ki-Ho
• Cai Sibo
• Yang Seung-Hune

Classifications

• G03F1/72 Primary

  Repair or correction of mask defects · CPC title

• G03F1/84

  Inspecting · CPC title