Photodetector with surface plasmon resonance

Patent metadata

Field	Value
Publication number	US-8941203-B2
Application number	US-201213611543-A
Country	US
Kind code	B2
Filing date	Sep 12, 2012
Priority date	Mar 1, 2012
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.

First claim

What is claimed is:

1. A radiation detector comprising:
a first semiconductor absorber layer having a first electrical conductivity type and a first energy bandgap responsive to radiation in a first spectral region, the first semiconductor absorber layer having a thickness approximately equal to a depletion width of the radiation detector;
a second semiconductor absorber layer having the first electrical conductivity type and a second energy bandgap responsive to radiation in a second spectral region;
a first semiconductor collector layer coupled to the first semiconductor absorber layer;
a second semiconductor collector layer coupled to the second semiconductor absorber layer and positioned between the second semiconductor absorber layer and the first semiconductor absorber layer, and having a second electrical conductivity type; and
a plasmonic resonator having a periodic structure of grating and including a plurality of ridges arranged in a regularly repeating pattern, the plasmonic resonator abutting a top surface of the first semiconductor collector layer, is configured to focus the radiation of the first spectral region into the first semiconductor absorber layer, and connected to provide an electrical contact for the radiation detector.

2. The radiation detector of claim 1 , wherein the plurality of ridges are interconnected to each other.

3. The radiation detector of claim 1 , wherein at least one of a dimensions of the plurality of ridges and a period of the grating is selected to impart a predetermined wavelength selectivity or polarization selectivity to the plasmonic resonator.

4. The radiation detector of claim 1 , further comprising a substrate, the second semiconductor absorber layer being formed on the substrate and positioned between the substrate and the second semiconductor collector layer.

5. The radiation detector of claim 1 , wherein the first electrical conductivity type is n-type, and the second electrical conductivity type is p-type.

6. The radiation detector of claim 5 , wherein the first semiconductor collector layer comprises an n+-type material.

7. The radiation detector of claim 5 , wherein the first semiconductor collector layer has the second electrical conductivity type.

8. The radiation detector of claim 1 , wherein the first spectral region includes a first plurality of wavelengths, and the second spectral region includes a second plurality of wavelengths that are shorter than the first plurality of wavelengths.

9. The radiation detector of claim 8 , wherein the second spectral region includes at least a portion of one of the NIR, SWIR and MWIR spectral regions.

10. A dual-band radiation detector comprising:
a first collector layer having a first electrical conductivity type;
a first absorber layer having a second electrical conductivity type and a first energy bandgap responsive to radiation in a first spectral region including a first plurality of wavelengths;
a second absorber layer having the second electrical conductivity type and a second energy bandgap responsive to radiation in a second spectral region including a second plurality of wavelengths longer than the first plurality of wavelengths, the first collector layer being positioned between the first and second absorber layers, the second absorber layer having a thickness approximately equal to a depletion width of the radiation detector;
a third layer coupled to the second absorber layer, the second absorber layer being positioned between the third layer and the first collector layer; and
a plasmonic resonator abutting a top surface of the third layer and having a grating structure including a plurality of ridges arranged in a regularly repeating pattern, the plasmonic resonator being configured to focus the radiation in the second spectral region to the second absorber layer, and connected to provide an electrical contact for the dual-band radiation detector.

11. The dual-band radiation detector of claim 10 , wherein the first collector layer comprises a p-type material, the first and second absorber layers each comprises an n-type material, and the third layer comprises an n+-type material.

12. The dual-band radiation detector of claim 10 , wherein the first and second spectral regions are infrared spectral regions.

13. The dual-band radiation detector of claim 10 , further comprising a substrate, the first absorber layer being formed on the substrate and positioned between the substrate and the first collector layer.

Assignees

• Wehner Justin Gordon Adams
• Smith Edward Peter Gordon
• Raytheon Co

Inventors

• Wehner Justin Gordon Adams
• Smith Edward Peter Gordon

Classifications

• H10F30/00

  Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors · CPC title

• H10F30/10

  the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors · CPC title

• H10F19/50

  Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components (H10F19/75 takes precedence) · CPC title

• H10F10/00

  Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G9/20) · CPC title

• H10F77/407

  indirectly associated with the devices · CPC title