Inkjet Printing on Substrates
US-2015115415-A1 · Apr 30, 2015 · US
US9698106B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9698106-B2 |
| Application number | US-201615073551-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 17, 2016 |
| Priority date | Mar 15, 2013 |
| Publication date | Jul 4, 2017 |
| Grant date | Jul 4, 2017 |
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Various techniques, methods, devices and apparatus are provided where an isolation layer is provided at a peripheral region of the substrate, and one or more metal layers are deposited onto the substrate.
Opening claim text (preview).
What is claimed is: 1. An apparatus comprising: an isolation forming device configured to form an isolation layer over a substrate, the isolation forming device comprising a mask designed and arranged to limit the isolation layer to a peripheral region of the substrate; and a metal deposition station configured to deposit at least one metal layer over a side of the substrate. 2. The apparatus of claim 1 , wherein the isolation forming device comprises an isolation deposition station configured to deposit the isolation layer over the side of the substrate, and a lithography station configured to restrict the isolation layer to the peripheral region of the substrate. 3. The apparatus of claim 2 , wherein the lithography station is configured to coat the isolation layer with a photoresist, to partially expose the photoresist to light, to partially remove the photoresist, and to remove the isolation layer at places where the photoresist has been removed. 4. The apparatus of claim 1 , wherein the isolation forming device is configured to perform a plasma-enhanced chemical vapor deposition. 5. The apparatus of claim 1 , wherein the isolation forming device is configured to form at least one of an oxide or a nitride. 6. The apparatus of claim 1 , wherein the metal deposition station comprises an electroless plating device. 7. An apparatus comprising: an isolation forming device for forming an isolation layer over a semiconductor wafer, the isolation forming device comprising a mask designed and arranged to substantially limit the isolation layer to a peripheral region of the semiconductor wafer; and a metal deposition station for depositing at least one metal layer over a side of the semiconductor wafer, the metal layer being at least partially adjacent the isolation layer. 8. The apparatus of claim 7 , wherein the isolation forming device comprises an isolation deposition station for depositing the isolation layer over the side of the semiconductor wafer, and a lithography station configured to restrict the isolation layer to the peripheral region of the semiconductor wafer. 9. The apparatus of claim 8 , wherein the lithography station is configured to coat the isolation layer with a photoresist, to partially expose the photoresist to light, to partially remove the photoresist, and to remove the isolation layer at places where the photoresist has been removed. 10. The apparatus of claim 7 , wherein the isolation forming device is configured to perform a plasma-enhanced chemical vapor deposition. 11. The apparatus of claim 7 , wherein the isolation forming device is configured to form at least one of an oxide or a nitride. 12. The apparatus of claim 7 , wherein the metal deposition station comprises an electroless plating device.
Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title
Preparing SOI wafers · CPC title
by shaping · CPC title
comprising at least one plating chamber · CPC title
comprising at least one lithography chamber · CPC title
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