Slurry composition for chemical mechanical polishing of metal and polishing method using the same

Patent metadata

Field	Value
Publication number	US-9695347-B2
Application number	US-96545307-A
Country	US
Kind code	B2
Filing date	Dec 27, 2007
Priority date	Oct 10, 2007
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

Provided is a slurry composition for chemical mechanical polishing (CMP) of a metal. The slurry composition comprises a copolymer whose average molecular weight is from about 600,000 to about 1,300,000 and whose monomers are acrylic acid and acrylamide in a molar ratio of about 1:30 to about 30:1. The slurry composition exhibits a non-Prestonian behavior to achieve minimized dishing and attain a high degree of planarization.

First claim

What is claimed is:

1. A slurry precursor composition for chemical mechanical polishing (CMP) of a metal, comprising: a liquid carrier, an abrasive consisting of an inorganic abrasive, a complexing agent, a corrosion inhibitor and a copolymer, wherein the copolymer has an average molecular weight of about 630,000 to about 950,000 and includes acrylic acid and acrylamide monomers in a copolymerization ratio of about 10:90 to about 80:20, wherein the composition exhibits non-Prestonian behavior, and wherein the composition provides a ratio of copper removal rate at 3 psi to copper removal rate at 1 psi (CuRR (3)/CuRR (1)) of 4.2 to 14.5.

2. The slurry precursor composition according to claim 1 , wherein the average molecular weight of the copolymer is determined by gel permeation chromatography (GPC) using pullulan as a molecular weight standard and an aqueous mobile phase.

3. The slurry precursor composition according to claim 1 , wherein the copolymer is present in an amount of about 0.001 to about 1% by weight, based on the weight of the liquid carrier and any other components dissolved or suspended therein.

4. The slurry precursor composition according to claim 1 , wherein the abrasive consists of alumina or silica.

5. The slurry precursor composition according to claim 1 , wherein the abrasive is present in an amount of about 0.1 to about 20% by weight, based on the weight of the liquid carrier and any other components dissolved or suspended therein.

6. The slurry precursor composition according to claim 1 , wherein the complexing agent is selected from the group consisting of carbonyl compounds, carboxylic acids and salts thereof, alcohols, amine-containing compounds, and combinations thereof.

7. The slurry precursor composition according to claim 1 , wherein the complexing agent is present in an amount of about 0.01 to about 5% by weight, based on the weight of the liquid carrier and any other components dissolved or suspended therein.

8. The slurry precursor composition according to claim 1 , wherein the corrosion inhibitor is selected from the group consisting of ammonia, alkylamines, amino acids, imines, azoles, and combinations thereof.

9. The slurry precursor composition according to claim 1 , wherein the corrosion inhibitor comprises benzotriazole and derivatives thereof.

10. The slurry precursor composition according to claim 1 , wherein the corrosion inhibitor is an isomeric mixture of 2,2′-[[(5-methyl-1H-benzotriazole-1-yl)-methyl]imino]bis-ethanol and 2,2′-[[(4-methyl-1H-benzotriazole-1-yl)-methyl]imino]bis-ethanol.

11. The slurry precursor composition according to claim 1 , wherein the corrosion inhibitor is present in an amount of about 0.005 to about 5% by weight, based on the weight of the liquid carrier and any other components dissolved or suspended therein.

12. The slurry precursor composition according to claim 1 , further comprising a pH-adjusting agent.

13. The slurry precursor composition according to claim 12 , wherein the pH-adjusting agent is selected from the group consisting of sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, potassium carbonate, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, citric acid, potassium phosphate, and combinations thereof.

14. The slurry precursor composition according to claim 1 , further comprising a surfactant.

15. The slurry precursor composition according to claim 14 , wherein the surfactant is an amphoteric or non-ionic surfactant.

16. The slurry precursor composition according to claim 14 , wherein the surfactant is present in an amount of about 0.01 to about 5% by weight, based on the weight of the liquid carrier and any other components dissolved or suspended therein.

17. The slurry precursor composition according to claim 1 , further comprising a biocide, or an antifoaming agent, or both a biocide and an antifoaming agent.

18. The slurry precursor composition according to claim 17 , wherein the biocide is isothiazolinone and the antifoaming agent is polydimethylsiloxane.

19. The slurry precursor composition according to claim 17 , wherein the biocide is present in an amount of about 1 to about 50 ppm and the antifoaming agent is present in an amount of about 40 to about 140 ppm, based on the weight of the liquid carrier and any other components dissolved or suspended therein.

20. The slurry precursor composition according to claim 1 , wherein the liquid carrier comprises deionized water.

21. The slurry precursor composition according to claim 1 , wherein the abrasive consists of a metal oxide abrasive and has an average particle diameter of about 40 to about 300 nm.

22. The slurry precursor composition according to claim 1 , wherein the copolymer includes acrylic acid and acrylamide monomers in a copolymerization ratio of about 10:90 to about 20:80.

23. The slurry precursor composition according to claim 1 , wherein the copolymer includes acrylic acid and acrylamide monomers in a copolymerization ratio of about 10:90.

24. The slurry precursor composition according to claim 1 , wherein the copolymer consists of a copolymer of acrylic acid and acrylamide monomers in a copolymerization ratio of about 10:90 to about 80:20 and having an average molecular weight of about 630,000 to about 950,000.

25. The slurry precursor composition according to claim 1 , wherein the copolymer includes acrylic acid and acrylamide monomers in a copolymerization ratio of about 10:90 to about 20:80 and wherein the composition provides a ratio of copper removal rate at 3 psi to copper removal rate at 1 psi (CuRR (3)/CuRR (1)) of 10.9 to 14.5.

26. The slurry precursor composition according to claim 1 , wherein the composition exhibits hypersensitive non-Prestonian behavior.

27. A chemical mechanical polishing (CMP) slurry composition comprising a CMP slurry precursor composition comprising a liquid carrier, an abrasive consisting of an inorganic abrasive, a complexing agent, a corrosion inhibitor and a copolymer, wherein the copolymer has an average molecular weight of about 630,000 to about 950,000 and includes acrylic acid and acrylamide monomers in a copolymerization ratio of about 10:90 to about 80:20 and an oxidizing agent,
wherein said CMP slurry composition exhibits non-Prestonian behavior, and
wherein said CMP slurry composition exhibits a ratio of copper removal rate at 3 psi to copper removal rate at 1 psi (CuRR (3)/CuRR (1)) of 4.2 to 14.5.

28. The slurry composition according to claim 27 , wherein the oxidizing agent is mixed with the slurry precursor composition before polishing.

29. The slurry composition according to claim 27 , wherein the oxidizing agent is selected from the group consisting of inorganic and organic per-compounds, hydrobromic acid and salts thereof, nitric acid and salts thereof, hydrochloric acid and salts thereof, chromic acid and salts thereof, hydroiodic acid and salts thereof, iron and copper salts, rare earth and transition metal oxides, potassium ferricyanide, potassium dichromate, and combinations thereof.

30. The slurry composition according to claim 27 , wherein the oxidizing agent is present in an amount of about 0.1 to about 30% by weight, based on the weight of the liquid carrier and any other components dissolved or suspended therein.

31. A chemical mechanical polishing (CMP) slurry

Assignees

• Chou Homer
• Kim Won Lae
• Noh Jong Il
• Lee In Kyung
• Lee Tae Young
• Samsung Sdi Co Ltd

Inventors

• Chou Homer
• Kim Won Lae
• Noh Jong Il
• Lee In Kyung
• Lee Tae Young

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09K3/1463 Primary

  Aqueous liquid suspensions · CPC title

• C23F3/06

  with acidic solutions · CPC title