Photodetector

Patent metadata

Field	Value
Publication number	US-9691932-B2
Application number	US-201514840316-A
Country	US
Kind code	B2
Filing date	Aug 31, 2015
Priority date	Sep 16, 2014
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.

First claim

What is claimed is:

1. A photodetector comprising:
a first light detection layer having a first surface and a second surface on a side opposite to the first surface, and including a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si;
a wiring layer connected to the first light detection area;
a quenching resistor connected to the first light detection area; and
a reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area, the reflective layer reflecting at least part of light in a wavelength range of 780 nm or longer and 2500 nm or shorter, the reflective layer being arranged without electrical connection to the wiring layer,
wherein the reflective layer is provided between the first light detection layer and the quenching resistor.

2. The photodetector according to claim 1 , wherein
the reflective layer is provided between the first light detection layer and the wiring layer.

3. The photodetector according to claim 1 , wherein the first surface is a surface of the first light detection area on a p-type semiconductor layer side of the p-n junction or a surface of the first light detection area on an n-type semiconductor layer side of the p-n junction.

4. The photodetector according to claim 1 , further comprising
a second light detection layer having a first surface on which light is incident and a second surface opposite to the first surface, and including a second light detection area including a p-n junction, wherein the first light detection layer and the second light detection layer are stacked in such a manner that the second surface of the first light detection area included in the first light detection layer and the second surface of the second light detection area included in the second light detection layer face the same direction, and
the second light detection layer is provided between the first light detection layer and the reflective layer.

5. The photodetector according to claim 4 , further comprising
an intermediate layer provided between the first light detection layer and the second light detection layer, wherein
the intermediate layer transmits at least part of light in a wavelength range to which the first light detection area is sensitive, at least part of light in a wavelength range to which the second light detection area is sensitive, and at least part of light in the wavelength range of 780 nm or longer and 2500 nm or shorter.

6. The photodetector according to claim 4 , further comprising
an antireflection layer provided between layers where a difference in refractive index therebetween is equal to or larger than a threshold among between the first light detection layer and the intermediate layer, between the intermediate layer and the second light detection layer, and between the second light detection layer and the reflective layer, the antireflection layer preventing reflection of at least part of light in a wavelength range to which the first light detection area is sensitive, at least part of light in a wavelength range to which the second light detection area is sensitive, and light in the wavelength range of 780 nm or longer and 2500 nm or shorter.

7. The photodetector according to claim 4 , wherein
when the first light detection area included in the first light detection layer and the second light detection area included in the second light detection layer are projected onto a third surface parallel to the first surface of the first light detection layer, at least part of the first light detection area overlaps with the second light detection area.

8. The photodetector according to claim 4 , wherein
when the first light detection area included in the first light detection layer and the second light detection area included in the second light detection layer are projected onto a third surface parallel to the first surface of the first light detection layer, at least part of the first light detection area does not overlap with the second light detection area.

9. The photodetector according to claim 4 , wherein
the second light detection area, which is positioned closer to the reflective layer among the first light detection area included in the first light detection layer and the second light detection area included in the second light detection layer, has a thickness larger than that of the first light detection area.

Assignees

• Toshiba Kk

Inventors

• Sasaki Keita
• Ueno Risako
• Funaki Hideyuki

Classifications

• H10W20/2134

  TSVs extending from the semiconductor wafer into back-end-of-line layers · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/20 Primary

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H01L27/14629

  Electricity · mapped topic