Light detection device having a semiconductor light detection element, a mounting substrate, a glass substrate and a plurality of through-hole electrodes electrically connected to quenching resistors

Patent metadata

Field	Value
Publication number	US-9435686-B2
Application number	US-201214352429-A
Country	US
Kind code	B2
Filing date	Aug 2, 2012
Priority date	Oct 21, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

First claim

The invention claimed is:

1. A light detection device comprising:
a semiconductor light detection element having a semiconductor substrate including first and second principal surfaces opposed to each other;
a mounting substrate arranged as opposed to the semiconductor light detection element and having a third principal surface opposed to the second principal surface of the semiconductor substrate; and
a glass substrate arranged as opposed to the semiconductor light detection element and having a fourth principal surface opposed to the first principal surface of the semiconductor substrate,
wherein the semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on the first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to the second principal surface side,
wherein the mounting substrate includes a plurality of first electrodes arranged corresponding to the respective through-hole electrodes on the third principal surface side, and a signal processing unit electrically connected to the plurality of first electrodes, and configured to process output signals from the respective avalanche photodiodes,
wherein the through-hole electrodes and the first electrodes are electrically connected through bump electrodes, and
wherein a side surface of the semiconductor substrate and a side surface of the glass substrate are flush with each other.

2. The light detection device according to claim 1 ,
wherein a principal surface of the glass substrate opposed to the fourth principal surface is flat.

3. The light detection device according to claim 1 ,
wherein the through-hole electrodes are located in regions among the avalanche photodiodes.

4. The light detection device according to claim 1 ,
wherein the semiconductor light detection element further includes second electrodes electrically connected to the corresponding through-hole electrodes and arranged on the second principal surface side of the semiconductor substrate, and
wherein the first electrodes and the second electrodes are connected through the bump electrodes.

5. The light detection device according to claim 4 , wherein each of the avalanche photodiodes has:
the semiconductor substrate of a first conductivity type;
a first semiconductor region of a second conductivity type formed on the first principal surface side of the semiconductor substrate;
a second semiconductor region of the second conductivity type formed in the first semiconductor region and having a higher impurity concentration than the first semiconductor region; and
a third electrode arranged on the first principal surface side of the semiconductor substrate and electrically connecting the second semiconductor region and the quenching resistor, and
wherein the second electrode is formed on a region corresponding to the second semiconductor region on the second principal surface.

6. The light detection device according to claim 1 ,
wherein a plurality of said quenching resistors are electrically connected to the through-hole electrode.

7. The light detection device according to claim 6 ,
wherein interconnection distances from the respective avalanche photodiodes through the corresponding quenching resistors to the through-hole electrode are equal.

Assignees

• Nagano Terumasa
• HOSOKAWA Noburo
• Suzuki Tomofumi
• Baba Takashi
• Hamamatsu Photonics Kk

Inventors

• Nagano Terumasa
• HOSOKAWA Noburo
• Suzuki Tomofumi
• Baba Takashi

Classifications

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10D1/47

  Resistors having no potential barriers · CPC title

• H10F77/933

  for devices having potential barriers · CPC title