Supporting unit, substrate treating device including the same, and method of manufacturing the supporting unit

Patent metadata

Field	Value
Publication number	US-9691644-B2
Application number	US-201314039422-A
Country	US
Kind code	B2
Filing date	Sep 27, 2013
Priority date	Sep 28, 2012
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

Provided is a supporting unit. The supporting unit includes: a supporting plate including a substrate on a top surface thereof; and a heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate, wherein the heater includes: a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern; an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; and a second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the pattern.

First claim

What is claimed is:

1. A supporting unit for heating a semiconductor substrate, comprising:
a supporting plate configured to support the semiconductor substrate on a top surface thereof; and
a heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate,
wherein the heater comprises:
a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern;
an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; and
a second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the predetermined pattern, and

wherein the second metal plating layer is thicker than the first metal plating layer.

2. The supporting unit of claim 1 , wherein the second metal plating layer has a thicker thickness than the anti-oxidation layer.

3. The supporting unit of claim 1 , wherein the anti-oxidation layer and the second metal plating layer are formed of the same material.

4. The supporting unit of claim 2 , wherein the predetermined pattern includes a terminal part that is directly connected to a wire connected to an external power, and the first metal plating layer, the anti-oxidation layer, and the second metal plating layer are sequentially applied on the terminal part.

5. The supporting unit of claim 2 , wherein the heater comprises:
a first pattern formed in a first area of the supporting plate;
a second pattern formed in a second area of the supporting plate separated from the first area, and separated from the first pattern; and
a connection pattern connecting the first pattern and the second pattern,
wherein the first metal plating layer and the anti-oxidation layer are sequentially applied on the bottom surface of the supporting plate in the first pattern and the second pattern, and
wherein the first metal plating layer, the anti-oxidation layer, and the second metal plating layer are sequentially applied on the bottom surface of the supporting plate in the connection pattern.

6. The supporting unit of claim 3 , wherein the second metal plating layer is formed of gold (Au).

7. A substrate processing device comprising:
a chamber having a space therein;
a supporting plate provided inside the chamber and including a semiconductor substrate on a top surface thereof; and
a heater forming a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate,
wherein the heater has a first portion of the predetermined pattern for generating heat based on current applied to the predetermined pattern and a second portion of the predetermined pattern for generating no heat, and
wherein the second portion is located near a terminal of the predetermined pattern,
wherein a first metal plating layer and an anti-oxidation layer are sequentially applied on the bottom surface of the supporting plate in the first portion of the predetermined pattern,
wherein the first metal plating layer, the anti-oxidation layer, and a second metal plating layer are sequentially applied on the bottom surface of the supporting plate in the second portion of the predetermined pattern, and
wherein the second metal plating layer is thicker than the anti-oxidation layer of a metal material.

8. The substrate processing device of claim 7 , wherein the anti-oxidation layer and the second metal plating layer are formed of the same material.

9. The substrate processing device of claim 7 , wherein the heater includes a terminal part that is directly connected to a wire applying current, and the terminal part corresponds to the second portion of the predetermined pattern.

10. The substrate processing device of claim 7 , wherein the bottom surface of the supporting plate has a first area and a second area separated from each other,
wherein the heater comprises:
a first pattern formed in the first area and corresponding to the first portion of the predetermined pattern;
a second pattern formed in the second area and corresponding to the first portion of the predetermined pattern; and
a connection pattern connecting the first pattern and the second pattern and corresponding to the second portion of the predetermined pattern.

Assignees

• Semes Co Ltd

Inventors

• Kong Tae Kyung

Classifications

• H10P72/0432 Primary

  mainly by conduction · CPC title

• C23C18/1689

  After-treatment · CPC title

• C23C18/1653

  Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating · CPC title

• C23C18/1651

  Two or more layers only obtained by electroless plating · CPC title

• C23C18/1608

  from pretreatment step, i.e. selective pre-treatment · CPC title