SRAM cells with vertical gate-all-round MOSFETs

Patent metadata

Field	Value
Publication number	US-9691471-B2
Application number	US-201414486293-A
Country	US
Kind code	B2
Filing date	Sep 15, 2014
Priority date	Sep 15, 2014
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A Static Random Access Memory (SRAM) cell includes a first boundary and a second boundary opposite to, and parallel to, the first boundary, a first and a second pull-up transistor, a first and a second pull-down transistor forming cross-latched inverters with the first and the second pull-up transistors, and a first and a second pass-gate transistor. Each of the first and the second pull-up transistors, the first and the second pull-down transistors, and the first and the second pass-gate transistors includes a bottom plate as a first source/drain region, a channel over the bottom plate, and a top plate over the channel as a second source/drain region. The SRAM cell further includes a first, a second, a third, and a fourth active region, each extending from the first boundary to the second boundary.

First claim

What is claimed is:

1. A Static Random Access Memory (SRAM) circuit comprising:
a semiconductor substrate; and
a first SRAM cell formed at a major top surface of the semiconductor substrate, the SRAM comprising:
a first boundary and a second boundary opposite to, and parallel to, the first boundary, wherein the first boundary and the second boundary are viewed in a top view of the first SRAM cell, wherein the top view is obtained from above the major top surface of the semiconductor substrate, and is obtained in a direction perpendicular the major top surface of the semiconductor substrate;
a first pull-up transistor and a second pull-up transistor;
a first pull-down transistor and a second pull-down transistor forming cross-latched inverters with the first pull-up transistor and the second pull-up transistor;
a first pass-gate transistor and a second pass-gate transistor, wherein each of the first and the second pull-up transistors, the first and the second pull-down transistors, and the first and the second pass-gate transistors comprises a bottom plate as a first source/drain region, a channel over the bottom plate, and a top plate over the channel as a second source/drain region, wherein the top plates of the first pull-up transistor, the first pull-down transistor, and the first pass-gate transistor in combination has a lengthwise direction parallel to the first boundary and the second boundary, and the top plates of the second pull-up transistor, the second pull-down transistor, and the second pass-gate transistor in combination has a lengthwise direction parallel to the first boundary and the second boundary; and
a first, a second, a third, and a fourth active region, each extending from the first boundary to the second boundary.

2. The SRAM circuit of claim 1 , wherein:
the first active region acts as both the bottom plate of the first pull-up transistor and the bottom plate of the second pull-up transistor; and
the second active region acts as both the bottom plate of the first pull-down transistor and the bottom plate of the second pull-down transistor.

3. The SRAM circuit of claim 1 , wherein the first active region is a CVdd power node, and the second active region is a CVss power node.

4. The SRAM circuit of claim 1 , wherein the third active region is a bit line, and the fourth active region is a complementary bit line.

5. The SRAM circuit of claim 1 , wherein the first pull-up transistor, the first pull-down transistor, and the first pass-gate transistor are aligned to a straight line parallel to the first boundary.

6. The SRAM circuit of claim 1 , wherein the first pull-up transistor, the first pull-down transistor, and the first pass-gate transistor share a same top plate as a common drain region.

7. The SRAM circuit of claim 1 further comprising a third boundary and a fourth boundary opposite to each other and perpendicular to the first boundary and the second boundary, wherein the first and the second boundaries are longer than the third and the fourth boundaries.

8. The SRAM circuit of claim 1 , wherein the first pass-gate transistor and the second pass-gate transistor are n-type transistors, and wherein the SRAM cell comprises an n-well and two p-wells on opposite sides of the n-well.

9. The SRAM circuit of claim 1 , wherein the first pass-gate transistor and the second pass-gate transistor are p-type transistors, and wherein the SRAM cell comprises a p-well and two n-wells on opposite sides of the p-well.

10. A Static Random Access Memory (SRAM) circuit comprising:
a plurality of SRAM cells, with boundaries of neighboring ones of the plurality of SRAM cells being abutting each other, wherein a first one of the plurality of SRAM cells comprises:
a first pull-up transistor and a second pull-up transistor;
a first pull-down transistor and a second pull-down transistor forming cross-latched inverters with the first pull-up transistor and the second pull-up transistor;
a first pass-gate transistor and a second pass-gate transistor, wherein each of the first and the second pull-up transistors, the first and the second pull-down transistors, and the first and the second pass-gate transistors comprises a bottom plate as a first source/drain region, a channel over the bottom plate, and a top plate over the channel as a second source/drain region;
a first top plate shared by the first pull-up transistor, the first pull-down transistor, and the first pass-gate transistor, wherein an entirety of the first top plate is a continuous conductive region formed of a first homogenous material, wherein the first pull-up transistor, the first pull-down transistor, and the first pass-gate transistor are aligned to a first straight line; and
a second top plate shared by the second pull-up transistor, the second pull-down transistor, and the second pass-gate transistor, wherein an entirety of the second top plate is a continuous conductive region formed of a second homogenous material, wherein the second pull-up transistor, the second pull-down transistor, and the second pass-gate transistor are aligned to a second straight line, and the first top plate and the second top plate are doped semiconductor regions.

11. The SRAM circuit of claim 10 , wherein the first one of the plurality of SRAM cells further comprises:
a first boundary and a second boundary opposite to each other, wherein the first boundary of the first one of the plurality of SRAM cells abuts a second boundary of a second one of the plurality of SRAM cells; and
a first, a second, a third, and a fourth active region extending from the first boundary to the second boundary, wherein the first, the second, the third, and the fourth active regions act as a bit line, a CVss line, a CVdd line, and a bit line bar, respectively.

12. The SRAM circuit of claim 11 , wherein each of the plurality of SRAM cells further comprises:
a first, a second, a third, and a fourth strap line extending from the first boundary to the second boundary, wherein the first, the second, the third, and the fourth strap lines overlap, and are electrically coupled to, the first, the second, the third, and the fourth active regions, respectively.

13. The SRAM circuit of claim 11 , wherein the second active region acts as a common source region of the first pull-down transistor and the second pull-down transistor.

14. The SRAM circuit of claim 11 , wherein the third active region acts as a common source region of the first pull-up transistor and the second pull-up transistor.

15. The SRAM circuit of claim 10 , wherein the first straight line and the second straight line are parallel to each other.

16. The SRAM circuit of claim 1 further comprising a second SRAM cell and a third SRAM cell on opposite sides of the first SRAM cell, wherein the first boundary of the first SRAM cell abuts a boundary of the second SRAM cell, and the second boundary of the first SRAM cell abuts a boundary of the third SRAM cell.

17. The SRAM circuit of claim 16 , wherein the each of the first, the second, the third, and the fourth active regions extends into both the second SRAM cell and the third SRAM cell.

18. The SRAM circuit of claim 11 further comprising a second SRAM cell and a third SRAM cell on opposite sides of the first SRAM cell, wherein the first boundary of the first SRAM cell abuts a boundary of the second SRAM cell, and the second boundary of the first SRAM cell abuts a boundary of the third SRAM cell.

19. The SRAM circuit of claim 18 , wherein the each of the first, the second, the third, and the fourth

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liaw Jhon Jhy

Classifications

• G11C11/412 Primary

  using field-effect transistors only · CPC title

• H01L29/66666

  Electricity · mapped topic

• H01L27/1104

  Electricity · mapped topic

• H01L27/0207

  Electricity · mapped topic

• H10D89/10

  Integrated device layouts · CPC title