Dual-rail power equalizer

US9690365B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9690365-B2
Application numberUS-201615138462-A
CountryUS
Kind codeB2
Filing dateApr 26, 2016
Priority dateApr 30, 2015
Publication dateJun 27, 2017
Grant dateJun 27, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A processing device performs dual-rail power equalization for its memory cell array and logic circuitry. The memory cell array is coupled to a first power rail through a first switch to receive a first voltage level. The logic circuitry is coupled to a second power rail through a second switch to receive a second voltage level that is different from the first voltage level. The processing device also includes a power switch coupled to at least the second power rail and operative to be enabled to equalize voltage supplied to the memory cell array and the logic circuitry.

First claim

Opening claim text (preview).

What is claimed is: 1. A processing device comprising: a memory cell array coupled to a first power rail through a first switch to receive a first voltage level; logic circuitry coupled to a second power rail through a second switch to receive a second voltage level that is different from the first voltage level; a power switch coupled to at least the second power rail and operative to be enabled to equalize voltage supplied to the memory cell array and the logic circuitry, wherein the power switch has a first end coupled to the memory cell array and a second end coupled to the second power rail, and is operative to be enabled to supply the second voltage level to both the memory cell array and the logic circuitry. 2. The processing device of claim 1 , wherein when the power switch is disabled, the first switch is operative to be enabled to supply the first voltage level to the memory cell array. 3. The processing device of claim 1 , wherein the power switch is operative to be turned on and off according to a value stored in a designated register. 4. A processing device comprising: a memory cell array coupled to a first power rail through a first switch to receive a first voltage level; logic circuitry coupled to a second power rail through a second switch to receive a second voltage level that is different from the first voltage level; a power switch coupled to at least the second power rail and operative to be enabled to equalize voltage supplied to the memory cell array and the logic circuitry, wherein the memory cell array and the logic circuitry operate at two different voltage levels with the power switch disabled when the second voltage level is below a threshold. 5. The processing device of claim 4 , wherein when the second voltage level exceeds the threshold, the memory cell array and the logic unit operate at the equalized voltage level with the power switch enabled. 6. The processing device of claim 4 , wherein the power switch is operative to be turned on and off according to a value stored in a designated register. 7. A processing device comprising: a memory cell array coupled to a first power rail through a first switch to receive a first voltage level; logic circuitry coupled to a second power rail through a second switch to receive a second voltage level that is different from the first voltage level; a power switch coupled to at least the second power rail and operative to be enabled to equalize voltage supplied to the memory cell array and the logic circuitry, wherein the power switch is a P-type Field-Effect Transistor (FET). 8. The processing device of claim 7 , wherein the power switch is operative to be turned on and off according to a value stored in a designated register. 9. The processing device of claim 7 , wherein the power switch has a first end coupled to the memory cell array and a second end coupled to the second power rail, and is operative to be enabled to supply the second voltage level to both the memory cell array and the logic circuitry. 10. The processing device of claim 9 , wherein when the power switch is disabled, the first switch is operative to be enabled to supply the first voltage level to the memory cell array. 11. The processing device of claim 7 , wherein the memory cell array and the logic circuitry operate at two different voltage levels with the power switch disabled when the second voltage level is below a threshold. 12. The processing device of claim 11 , wherein when the second voltage level exceeds the threshold, the memory cell array and the logic unit operate at the equalized voltage level with the power switch enabled. 13. A method of a processing device that includes a memory cell array and logic circuitry, comprising: disabling a power switch for the memory cell array to receive a first voltage level supplied by a first power rail and for the logic circuitry to receive a second voltage level supplied by a second power rail, wherein the first voltage level is different from the second voltage level; enabling the power switch to equalize voltage supplied to the memory cell array and the logic circuitry; and disabling the power switch when the second voltage level is below a threshold. 14. The method of claim 13 , further comprising: enabling the power switch when the second voltage level exceeds a threshold. 15. The method of claim 13 , wherein the power switch has a first end coupled to the memory cell array and a second end coupled to the second power rail, and wherein enabling the power switch further comprises: supplying the second voltage level to both the memory cell array and the logic circuitry. 16. The method of claim 13 , further comprising: generating a value in a designated register to enable or disable the power switch.

Assignees

Inventors

Classifications

  • G06F1/3296Primary

    by lowering the supply or operating voltage · CPC title

  • Power saving in memory, e.g. RAM, cache · CPC title

  • G06F1/26Primary

    Power supply means, e.g. regulation thereof (for memories G11C) · CPC title

  • Energy efficient computing, e.g. low power processors, power management or thermal management · CPC title

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What does patent US9690365B2 cover?
A processing device performs dual-rail power equalization for its memory cell array and logic circuitry. The memory cell array is coupled to a first power rail through a first switch to receive a first voltage level. The logic circuitry is coupled to a second power rail through a second switch to receive a second voltage level that is different from the first voltage level. The processing devic…
Who is the assignee on this patent?
Mediatek Inc, Mediatek Inc
What technology area does this patent fall under?
Primary CPC classification G06F1/3296. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 27 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).