Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Patent metadata

Field	Value
Publication number	US-9688580-B2
Application number	US-201515303878-A
Country	US
Kind code	B2
Filing date	Apr 15, 2015
Priority date	Apr 17, 2014
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×10 18 cm −3 or lower, and a carrier mobility of 10 cm 2 V −1 sec −1 or higher.

First claim

The invention claimed is:

1. An oxide sintered body comprising indium, gallium, and copper as oxides, wherein
a gallium content is 0.20 or more and 0.45 or less in terms of Ga/(In+Ga) atomic ratio,
a copper content is 0.001 or more and less than 0.03 in terms of Cu/(In+Ga+Cu) atomic ratio, and
the oxide sintered body comprises
an In 2 O 3 phase having a bixbyite-type structure,
and a GaInO 3 phase having a β-Ga 2 O 3 -type structure as a formed phase other than the In 2 O 3 phase,
or a GaInO 3 phase having a β-Ga 2 O 3 -type structure and a (Ga, In) 2 O 3 phase as a formed phase other than the In 2 O 3 phase.

2. The oxide sintered body according to claim 1 , wherein the copper content is 0.001 or more and 0.015 or less in terms of Cu/(In+Ga+Cu) atomic ratio.

3. The oxide sintered body according to claim 1 , wherein the gallium content is 0.20 or more and 0.30 or less in terms of Ga/(In+Ga) atomic ratio.

4. The oxide sintered body according to claim 1 , wherein the oxide sintered body is substantially free of positive divalent elements other than copper and positive trivalent to positive hexavalent elements other than indium and gallium.

5. The oxide sintered body according to claim 1 , wherein an X-ray diffraction peak intensity ratio of the GaInO 3 phase having a β-Ga 2 O 3 -type structure defined by formula 1 below is in the range of 2 % or more and 77% or less:
100×I[GaInO 3 phase (111)]/{I[In 2 O 3 phase (400)]+I[GaInO 3 phase (111)]}[%]  Formula 1.

6. A sputtering target obtained by machining the oxide sintered body according to claim 1 .

7. An amorphous oxide semiconductor thin film obtained by film deposition
on a substrate by sputtering using the sputtering target according to claim 6 , followed by heating.

8. The amorphous oxide semiconductor thin film according to claim 7 , wherein the oxide semiconductor thin film has a carrier mobility of 10 cm 2 V −1 sec −1 or more.

9. The amorphous oxide semiconductor thin film according to claim 7 , wherein the oxide semiconductor thin film has a carrier density of 3.0×10 18 cm −3 or less.

Assignees

• Sumitomo Metal Mining Co

Inventors

• Nakayama Tokuyuki
• Nishimura Eiichiro
• Matsumura Fumihiko
• Iwara Masashi

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• C23C14/08 Primary

  Oxides (C23C14/10 takes precedence) · CPC title