Devices and methods for controlling magnetic anisotropy with localized biaxial strain in a piezoelectric substrate

Patent metadata

Field	Value
Publication number	US-9685214-B2
Application number	US-201514740147-A
Country	US
Kind code	B2
Filing date	Jun 15, 2015
Priority date	Jun 13, 2014
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

Devices and methods for controlling magnetic anisotropy and orientation of magnetic single domain structures between stable states are provided based on piezoelectric thin films and patterned electrodes. By using patterned electrodes, piezoelectric strain is manipulated to achieve a highly localized biaxial strain in a piezoelectric substrate and rotate the magnetic anisotropy of magnetic materials. Reorientation of a magnetic single domain between different stable states is accomplished by pulsing voltage across pairs of electrodes. Since only a small region surrounding the electrodes is strained, the methods can be applied to arrays of indexed magnetic elements and to piezoelectric thin films clamped to silicon base substrates.

First claim

What is claimed is:

1. A piezoelectric device, comprising:
(a) a thin piezoelectric substrate film;
(b) a pattern of a plurality of paired top electrodes on a top surface of said piezoelectric substrate film, each top electrode pair oriented linearly;
(c) a continuously planar bottom electrode mounted to the bottom of said piezoelectric substrate film; and
(d) one or more magnetostrictive islands on said top surface of the piezoelectric substrate film located between the top electrodes of at least one pair of top electrodes;
(e) wherein each of said top electrodes of the pattern of top electrodes has at least one dimension that is approximately equal to a thickness of said thin piezoelectric substrate film;
(f) wherein the piezoelectric substrate film immediately under the top electrodes will elongate out-of-plane and contract in-plane when a potential is applied thereto; and
(g) wherein magnetization of said magnetostrictive islands can be controlled by a voltage applied to said pairs of top electrodes.

2. The device as recited in claim 1 , further comprising a silicon base coupled to said bottom electrode.

3. The device as recited in claim 1 , wherein said top electrodes comprise two pairs of top electrodes oriented orthogonally, said magnetostrictive island located between said two pairs of top electrodes.

4. The device as recited in claim 1 , wherein said top electrodes comprise three pairs of top electrodes in a circular orientation, said magnetostrictive island located between said three pairs of top electrodes.

5. The device as recited in claim 1 , wherein said pattern of top electrodes comprises more than one circular cluster of paired top electrodes, each cluster containing a magnetostrictive island.

6. The device as recited in claim 1 , wherein one or more of said top electrodes of said top electrode pairs comprises a magnetostrictive material.

7. A piezoelectric device, comprising:
(a) a thin piezoelectric substrate film;
(b) a pattern of a plurality of paired top electrodes on a top surface of the piezoelectric substrate film, each top electrode pair oriented linearly;
(c) a continuously planar bottom electrode mounted to the bottom of the piezoelectric substrate film; and
(d) one or more magnetostrictive islands on said top surface of the piezoelectric substrate film located between the top electrodes of at least one pair of top electrodes;
(e) wherein the top electrodes comprise three pairs of top electrodes in a circular orientation, the magnetostrictive island located between the pairs of top electrodes;
(f) wherein the piezoelectric substrate film immediately under the top electrodes will elongate out-of-plane and contract in-plane when a potential is applied thereto; and
(g) wherein magnetization of the magnetostrictive islands can be controlled by a voltage applied to the pairs of top electrodes.

8. The device as recited in claim 7 , further comprising a silicon base coupled to the bottom electrode.

9. The device as recited in claim 7 , wherein one or more of the top electrodes of the top electrode pairs comprises a magnetostrictive material.

10. A piezoelectric device, comprising:
(a) a thin piezoelectric substrate film;
(b) a pattern of a plurality of paired top electrodes on a top surface of the piezoelectric substrate film, each top electrode pair oriented linearly;
(c) a continuously planar bottom electrode mounted to the bottom of the piezoelectric substrate film; and
(d) one or more magnetostrictive islands on the top surface of the piezoelectric substrate film located between the top electrodes of at least one pair of top electrodes;
(e) wherein the pattern of top electrodes comprises more than one circular cluster of paired top electrodes, each cluster containing a magnetostrictive island;
(f) wherein the piezoelectric substrate film immediately under the top electrodes will elongate out-of-plane and contract in-plane when a potential is applied thereto; and
(g) wherein magnetization of said magnetostrictive islands can be controlled by a voltage applied to said pairs of top electrodes.

11. The device as recited in claim 10 , further comprising a silicon base coupled to the bottom electrode.

12. The device as recited in claim 10 , wherein one or more of the top electrodes of the top electrode pairs comprises a magnetostrictive material.

Assignees

• Univ California

Inventors

• Lynch Christopher S
• Cui Jizhai
• Hockel Joshua
• Carman Gregory P

Classifications

• G11C2013/0095

  Write using strain induced by, e.g. piezoelectric, thermal effects · CPC title

• G11C11/1673 Primary

  Reading or sensing circuits or methods · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/14

  using thin-film elements · CPC title

• H01L41/0926

  Electricity · mapped topic