Directed self-assembling composition for pattern formation, and pattern-forming method

Patent metadata

Field	Value
Publication number	US-9684235-B2
Application number	US-201414272587-A
Country	US
Kind code	B2
Filing date	May 8, 2014
Priority date	Nov 9, 2011
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

First claim

The invention claimed is:

1. A directed self-assembling composition comprising:
a block copolymer comprising:
a polystyrene block having a styrene unit; and
a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit; and

a solvent in which phase separation of the block copolymer occurs,
the block copolymer comprising an organic group that is bound to at least one end of a main chain of the polyalkyl (meth)acrylate block and that comprises a hetero atom,
wherein a polymerization initiation end of the block copolymer comprises a structure derived from an alkyl lithium,
wherein the organic group included in the block copolymer comprises a nitrogen atom, a sulfur atom, a phosphorus atom, a tin atom, or a combination thereof, or is represented by formula (1):

wherein, in the formula (1), R 1 represents a single bond or a divalent organic group having 1 to 30 carbon atoms; and R 2 represents a hydrogen atom, an aliphatic linear hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, or a group in which the aliphatic linear hydrocarbon group having 1 to 30 carbon atoms or the alicyclic hydrocarbon group having 3 to 30 carbon atoms comprises a hetero atom between adjacent two carbon atoms, and
wherein the block copolymer is a diblock copolymer and the organic group is not a monomeric unit included in the block copolymer.

2. The directed self-assembling composition according to claim 1 , wherein the alkyl (meth)acrylate unit is a methyl methacrylate unit.

3. The directed self-assembling composition according to claim 1 , wherein a molar ratio of styrene units to alkyl (meth)acrylate units in the block copolymer is no less than 10/90 and no greater than 90/10.

4. The directed self-assembling composition according to claim 1 , wherein the organic group included in the block copolymer is derived from an epoxy compound.

5. A pattern-forming method comprising:
applying the directed self-assembling composition according to claim 1 on a substrate to provide a directed self-assembling film having a phase separation structure on the substrate; and
removing a part of phases of the directed self-assembling film.

6. The pattern-forming method according to claim 5 ,
wherein the method further comprises before providing the directed self-assembling film:
providing an underlayer film on the substrate; and
forming a prepattern on the underlayer film,

wherein the directed self-assembling film is provided in a region compartmentalized by the prepattern on the underlayer film, and
wherein the method further comprises after providing the directed self-assembling film,
removing the prepattern.

7. The pattern-forming method according to claim 5 , wherein the pattern obtained is a line-and-space pattern or a hole pattern.

8. The directed self-assembling composition according to claim 1 , wherein the hetero atom is a nitrogen atom, a sulfur atom, a phosphorus atom, a tin atom or a combination thereof.

9. The directed self-assembling composition according to claim 1 , wherein R 1 represents a divalent organic group having 2 to 30 carbon atoms.

10. The directed self-assembling composition according to claim 1 , wherein R 1 represents an aliphatic linear hydrocarbon group having 2 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms, or an aromatic hydrocarbon group having 6 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms.

11. The directed self-assembling composition according to claim 1 , wherein the organic group included in the block copolymer is represented by the formula (1).

12. The directed self-assembling composition according to claim 11 , wherein R 1 represents a divalent organic group having 2 to 30 carbon atoms.

13. The directed self-assembling composition according to claim 11 , wherein R 1 represents an aliphatic linear hydrocarbon group having 2 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms, or an aromatic hydrocarbon group having 6 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms.

14. The pattern-forming method according to claim 5 , wherein the organic group included in the block copolymer is represented by the formula (1).

15. The pattern-forming method according to claim 14 , wherein R 1 represents a divalent organic group having 2 to 30 carbon atoms.

16. The pattern-forming method according to claim 14 , wherein R 1 represents an aliphatic linear hydrocarbon group having 2 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms, or an aromatic hydrocarbon group having 6 to 30 carbon atoms and optionally comprising a hetero atom between adjacent two carbon atoms.

Assignees

• Jsr Corp

Inventors

• Namie Yuji
• Minegishi Shinya
• Nagai Tomoki
• Sone Takuo

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title