Method of manufacturing semiconductor device and method of cleaning processing vessel

Patent metadata

Field	Value
Publication number	US-9683288-B2
Application number	US-201414184051-A
Country	US
Kind code	B2
Filing date	Feb 19, 2014
Priority date	Apr 23, 2010
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) supplying a processing gas into a processing vessel accommodating a substrate to form a thin film on the substrate;
(b) supplying a fluorine-containing gas and a nitrogen monoxide gas into a first cleaning gas supply system and mixing the fluorine-containing gas with the nitrogen monoxide gas in the first cleaning gas supply system to generate an FNO gas; and
(c) supplying the FNO gas into the processing vessel through the first cleaning gas supply system while simultaneously supplying the fluorine-containing gas into the processing vessel through a second cleaning gas supply system installed apart from the first cleaning gas supply system without supplying the nitrogen monoxide gas into the processing vessel through the second cleaning gas supply system, and mixing the FNO gas with the fluorine-containing gas in the processing vessel so as to remove a deposit containing the thin film adhered to an inside of the processing vessel.

2. The method of claim 1 , wherein the step (b) comprises mixing and reacting the fluorine-containing gas with the nitrogen monoxide gas in a pipe installed in the first cleaning gas supply system to generate the FNO gas in the pipe.

3. The method of claim 1 , wherein the step (b) comprises mixing and reacting the fluorine-containing gas with the nitrogen monoxide gas in a mixing pipe whereat a pipe installed in the first cleaning gas supply system to supply the fluorine-containing gas is joined with a pipe installed in the first cleaning gas supply system to supply the nitrogen monoxide gas to generate the FNO gas in the mixing pipe.

4. The method of claim 1 , wherein the step (c) comprises separately supplying the FNO gas supplied through the first cleaning gas supply system and the fluorine-containing gas supplied through the second cleaning gas supply system into the processing vessel through two separate nozzles.

5. The method of claim 1 , wherein the step (c) comprises directly supplying the FNO gas into the processing vessel through a first nozzle connected to the first cleaning gas supply system and simultaneously directly supplying the fluorine-containing gas into the processing vessel through a second nozzle connected to the second cleaning gas supply system, the second nozzle being installed apart from the first nozzle.

6. The method of claim 1 , wherein the step (c) comprises first mixing the FNO gas supplied through the first cleaning gas supply system and the fluorine-containing gas supplied thorough the second cleaning gas supply system in the processing vessel.

7. The method of claim 1 , wherein the step (c) comprises making a state that the FNO gas supplied through the first cleaning gas supply system and the fluorine-containing gas supplied thorough the second cleaning gas supply system are co-existed in the processing vessel.

8. The method of claim 1 , the step (c) comprises supplying an inert gas into the processing vessel.

9. The method of claim 1 , wherein the fluorine-containing gas comprises one of a fluorine gas, a chlorine fluoride gas, a nitrogen fluoride gas and a fluorocarbon gas.

10. A method of cleaning an inside of a processing vessel comprising:
(a) providing the processing vessel configured to process a substrate to form a thin film thereon; and
(b) supplying a fluorine-containing gas and a nitrogen monoxide gas into a first cleaning gas supply system and mixing the fluorine-containing gas with the nitrogen monoxide gas in the first cleaning gas supply system to generate an FNO gas; and
(c) supplying the FNO gas into the processing vessel through the first cleaning gas supply system while simultaneously supplying the fluorine-containing gas into the processing vessel through a second cleaning gas supply system installed apart from the first cleaning gas supply system without supplying the nitrogen monoxide gas into the processing vessel through the second cleaning gas supply system, and mixing the FNO gas with the fluorine-containing gas in the processing vessel so as to remove a deposit containing the thin film adhered to an inside of the processing vessel.

Assignees

• Hitachi Int Electric Inc
• Air Liquide

Inventors

• Kameda Kenji
• Sonobe Jun
• Tadaki Yudai

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• C23C16/4405 Primary

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• H01L21/02271

  Electricity · mapped topic