Single-crystal diamond and method of manufacturing the same
US-2024175167-A1 · May 30, 2024 · US
US9682864B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9682864-B2 |
| Application number | US-201113994852-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 16, 2011 |
| Priority date | Dec 24, 2010 |
| Publication date | Jun 20, 2017 |
| Grant date | Jun 20, 2017 |
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A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.
Opening claim text (preview).
The invention claimed is: 1. A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions, wherein the layer of single crystal CVD synthetic diamond has a thickness equal to or greater than 1 μm, wherein the non-parallel dislocation array e…
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