Array Substrate Including Oxide Thin Film Transistor and Method of Fabricating the Same
US-2015144944-A1 · May 28, 2015 · US
US9679970B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9679970-B1 |
| Application number | US-201514965785-A |
| Country | US |
| Kind code | B1 |
| Filing date | Dec 10, 2015 |
| Priority date | Feb 19, 2015 |
| Publication date | Jun 13, 2017 |
| Grant date | Jun 13, 2017 |
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A device including a biopolymer membrane, a passivation layer on the biopolymer membrane, a graphene layer on the passivation layer, a source electrode on the graphene layer, and a drain electrode on the graphene layer, wherein the graphene layer extends between the source electrode and the drain electrode.
Opening claim text (preview).
What is claimed is: 1. A device comprising: a biopolymer membrane comprising a biopolymer; a passivation layer on the biopolymer membrane; a graphene layer on the passivation layer; a source electrode on the graphene layer; and a drain electrode on the graphene layer; wherein the graphene layer extends between the source electrode and the drain electrode; wherein a thickness of the biopolymer membrane is less than 10 μm; and wherein the biopolymer membrane comprises microbial cellulose. 2. The device of claim 1 wherein: the source electrode extends over the passivation layer; and the drain electrode extends over the passivation layer. 3. The device of claim 1 wherein the passivation layer comprises a dielectric. 4. The device of claim 1 wherein the passivation layer comprises: a dielectric on the biopolymer membrane; and a bio-compatible polymer on the dielectric. 5. The device of claim 4 : wherein the dielectric comprises Al 2 O 3 , SiO 2 , or HfO 2 ; and wherein the bio-compatible polymer comprises SU-8, polyimide, parylene, or polydimethylsiloxane (PDMS). 6. The device of claim 1 wherein the passivation layer comprises a bio-compatible polymer on the biopolymer membrane. 7. The device of claim 6 wherein the bio-compatible polymer comprises SU-8, polyimide, parylene, or PDMS. 8. The device of claim 1 wherein the graphene layer is a chemical vapor deposition-grown graphene. 9. The device of claim 1 further comprising: a gate insulator on the graphene layer; and a gate electrode on the gate insulator; wherein the gate electrode is between the source electrode and the drain electrode. 10. The device of claim 9 wherein the gate insulator comprises a dielectric. 11. The device of claim 1 wherein the device is a sensor or a transistor. 12. The device of claim 1 : wherein a carrier mobility is greater than 1,600 cm 2 /Vs; and wherein a flexibility is up to 18% strain.
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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