Manufacturing method of semiconductor device, and semiconductor device

Patent metadata

Field	Value
Publication number	US-9673073-B2
Application number	US-201615224804-A
Country	US
Kind code	B2
Filing date	Aug 1, 2016
Priority date	May 10, 2013
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state. Between the step of polishing and the step of cleaning, or after the step of cleaning, the substrate SUB is moved by detecting the presence or absence of the substrate SUB in the light-shielded state using an infrared sensor.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device by using a semiconductor manufacturing apparatus, comprising steps of:
(a) forming a first wiring over a semiconductor substrate;
(b) forming an insulating film over the first wiring;
(c) forming, in the insulating film, a hole connected to the first wiring and a trench connected to the hole;
(d) forming a conductive film over the insulating film in order to fill in the hole and the trench;
(e) polishing the conductive film outside the hole and the trench, thereby a second wiring is formed in the trench and a via is formed in the hole; and
(f) cleaning surfaces of the insulating film and the second wiring,
wherein the step (e) is performed in a polishing chamber of the semiconductor manufacturing apparatus,
wherein the step (f) is performed in a cleaning chamber of the semiconductor manufacturing apparatus,
wherein, while the semiconductor substrate is moved from the polishing chamber to the cleaning chamber, the presence of the semiconductor substrate is confirmed by using an infrared sensor, and
wherein the steps (e) and (f) are performed in the light shielded state.

2. A method for manufacturing a semiconductor device according to claim 1 , wherein the conductive film includes a metal film and a barrier metal film,
wherein the polishing chamber includes a first polishing chamber and a second polishing chamber,
wherein the metal film is polished in the first polishing chamber, and
wherein the barrier metal film is polished in the second polishing chamber.

3. A method for manufacturing a semiconductor device according to claim 2 , wherein the metal film is a Cu film.

4. A method for manufacturing a semiconductor device according to claim 1 , wherein the step (f) is performed by using pure water.

5. A method for manufacturing a semiconductor device according to claim 1 , wherein a detectable wavelength region by the infrared sensor is not less than 8 μm and not more than 10 μm.

6. A method for manufacturing a semiconductor device by using a semiconductor manufacturing apparatus, comprising steps of:
(a) forming a first wiring over a semiconductor substrate;
(b) forming an insulating film over the first wiring;
(c) forming, in the insulating film, a hole connected to the first wiring and a trench connected to the hole;
(d) forming a conductive film over the insulating film in order to fill in the hole and the trench;
(e) polishing the conductive film outside the hole and the trench, thereby a second wiring is formed in the trench and a via is formed in the hole; and
(f) cleaning surfaces of the insulating film and the second wiring,
wherein the step (e) is performed in a polishing chamber of the semiconductor manufacturing apparatus,
wherein the step (f) is performed in a cleaning chamber of the semiconductor manufacturing apparatus, and
wherein, while the semiconductor substrate is moved from the polishing chamber to the cleaning chamber, the presence of the semiconductor substrate is confirmed by using an infrared sensor,
wherein the conductive film includes a metal film and a barrier metal film,
wherein the polishing chamber includes a first polishing chamber and a second polishing chamber,
wherein the metal film is polished in the first polishing chamber, and
wherein the barrier metal film is polished in the second polishing chamber.

7. A method for manufacturing a semiconductor device according to claim 6 , wherein the metal film is a Cu film.

8. A method for manufacturing a semiconductor device according to claim 6 , wherein the step (f) is performed by using pure water.

Assignees

• Renesas Electronics Corp

Inventors

• Nosaka Takayuki

Classifications

• H10P74/20

  characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title

• H10P72/3314

  Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers · CPC title

• H10P72/0606

  Position monitoring, e.g. misposition detection or presence detection · CPC title

• H10P72/0456

  in-line arrangement · CPC title

• H10P72/0444

  Apparatus for wiring semiconductor or solid-state device · CPC title