Integrated on chip detector and zero waveguide module structure for use in DNA sequencing

Patent metadata

Field	Value
Publication number	US-9666748-B2
Application number	US-201514596823-A
Country	US
Kind code	B2
Filing date	Jan 14, 2015
Priority date	Jan 14, 2015
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

A semiconductor structure for use in single molecule real time DNA sequencing technology is provided. The structure includes a semiconductor substrate including a first region and an adjoining second region. A photodetector is present in the first region and a plurality of semiconductor devices is present in the second region. A contact wire is located on a surface of a dielectric material that surrounds the photodetector and contacts a topmost surface of the photodetector and a portion of one of the semiconductor devices. An interconnect structure is located above the first region and the second region, and a metal layer is located atop the interconnect structure. The metal layer has a zero waveguide module located above the first region of the semiconductor substrate. A DNA polymerase can be present at the bottom of the zero waveguide module.

First claim

What is claimed is:

1. A semiconductor structure comprising:
a semiconductor substrate comprising a first region and an adjoining second region, wherein at least one photodetector is present in said first region of said semiconductor substrate and located on a portion of a sub-surface of said semiconductor substrate, and wherein a plurality of semiconductor devices is present in said second region of said semiconductor substrate and located on a topmost surface of said semiconductor substrate;
a dielectric material laterally surrounding said at least one photodetector and located directly on exposed portions of said sub-surface of said semiconductor substrate;
a contact wire located on a surface of said dielectric material and contacting a topmost surface of said at least one photodetector and a portion of one of said semiconductor devices;
an interconnect structure located above said first region and said second region of said semiconductor substrate, said contact wire and said plurality of semiconductor devices; and
a metal layer located above a topmost surface of said interconnect structure, wherein said metal layer has an opening that provides a zero waveguide module located above said first region of said semiconductor substrate.

2. The semiconductor structure of claim 1 , wherein said at least one photodetector is a semiconductor nanowire photodetector.

3. The semiconductor structure of claim 2 , wherein said semiconductor nanowire photodetector comprises, from bottom to top, a first semiconductor material portion of a first conductivity type, a second semiconductor material portion that is intrinsic, and a third semiconductor material portion of a second conductivity type, wherein said second conductivity type is opposite from said first conductivity type.

4. The semiconductor structure of claim 1 , further comprising an optical via structure positioned in said first region of said semiconductor substrate and located adjacent, but not in contact, with said at least one photodetector.

5. The semiconductor structure of claim 4 , wherein said optical via structure comprises an inner cladding material laterally surrounded by an outer cladding material, wherein said inner cladding material has a refractive index that is less than a refractive index of said outer cladding material.

6. The semiconductor structure of claim 4 , wherein a topmost surface of said optical via structure is coplanar with a topmost surface of said at least one photodetector.

7. The semiconductor structure of claim 1 , further comprising a DNA polymerase located at a bottom of said zero waveguide module.

8. An apparatus for single molecule real time DNA sequencing, said apparatus comprising:
a semiconductor substrate comprising a first region and an adjoining second region, wherein at least one photodetector is present in said first region of said semiconductor substrate and located on a portion of a sub-surface of said semiconductor substrate, and wherein a plurality of semiconductor devices is present in said second region of said semiconductor substrate and located on a topmost surface of said semiconductor substrate;
a dielectric material laterally surrounding said at least one photodetector and located directly on exposed portions of said sub-surface of said semiconductor substrate;
a contact wire located on a surface of said dielectric material and contacting a topmost surface of said at least one photodetector and a portion of one of said semiconductor devices;
an interconnect structure located above said first region and said second region of said semiconductor substrate, said contact wire and said plurality of semiconductor devices;
a metal layer located above a topmost surface of said interconnect structure, wherein said metal layer has an opening that provides a zero waveguide module located above said first region of said semiconductor substrate;
a DNA polymerase located at a bottom of said opening that provides said zero waveguide module; and
a light source located beneath said first region of said semiconductor substrate.

9. The apparatus of claim 8 , wherein said at least one photodetector is a semiconductor nanowire photodetector.

10. The apparatus of claim 9 , wherein said semiconductor nanowire photodetector comprises, from bottom to top, a first semiconductor material portion of a first conductivity type, a second semiconductor material portion that is intrinsic, and a third semiconductor material portion of a second conductivity type, wherein said second conductivity type is opposite from said first conductivity type.

11. The apparatus of claim 8 , further comprising an optical via structure positioned in said first region of said semiconductor substrate and located adjacent, but not in contact, with said at least one photodetector.

12. The apparatus of claim 11 , wherein said optical via structure comprises an inner cladding material laterally surrounded by an outer cladding material, wherein said inner cladding material has a refractive index that is less than a refractive index of said outer cladding material.

13. The apparatus of claim 12 , wherein a topmost surface of said optical via structure is coplanar with a topmost surface of said at least one photodetector.

14. The apparatus of claim 8 , wherein said light source is a laser.

Assignees

• IBM

Inventors

• Leobandung Effendi

Classifications

• H10F39/103 Primary

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• C12Q1/6874

  involving nucleic acid arrays, e.g. sequencing by hybridisation · CPC title

• H01L31/18 Primary

  Electricity · mapped topic

• C12Q2565/607

  being a sensor, e.g. electrode · CPC title

• H01L31/035227

  Electricity · mapped topic