Polishing apparatus and polishing method

Patent metadata

Field	Value
Publication number	US-9666440-B2
Application number	US-201314142690-A
Country	US
Kind code	B2
Filing date	Dec 27, 2013
Priority date	Dec 27, 2012
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

A polishing apparatus 100 includes a holding stage 4 that holds a central portion of a back surface of a substrate W, a motor M 1 that rotates the holding stage 4 , a front surface nozzle 36 that feeds a rinse liquid to a front surface of the substrate W, a back surface nozzle 37 that feeds the rinse liquid to a back surface of the substrate W, a rinse liquid control section 110 that feeds the rinse liquid through the back surface nozzle 37 after a preset time elapses since the start of feeding of the rinse liquid through the front surface nozzle 36 and a polishing head assembly 1 A that polishes a peripheral portion of the substrate installed on the holding stage 4 after the rinse liquid control section 110 feeds the rinse liquid to the substrate W.

First claim

What is claimed is:

1. A polishing method for polishing a substrate, comprising:
rotating a stage on which the substrate is held;
feeding a liquid to a first surface of the substrate which is not held on the stage;
feeding the liquid to a second surface of the substrate which is held on the stage after a predetermined time has elapsed since feeding of the liquid to the first surface of the substrate started; and
polishing a peripheral portion of the substrate while the liquid is being fed to the first surface and the second surface of the substrate,
wherein the feeding of the liquid to the second surface starts during the feeding of the liquid to the first surface.

2. The polishing method according to claim 1 , wherein the feeding the liquid comprises feeding the liquid to the second surface of the substrate held on the stage after a predetermined time has elapsed since feeding of the liquid to the first surface of the substrate started, so that the liquid fed to the first surface of the substrate reaches the peripheral portion of the substrate by a centrifugal force before the liquid fed to the second surface of the substrate reaches the peripheral portion of the substrate by a centrifugal force.

3. The polishing method according to claim 1 , wherein the rotating the stage is rotating the stage with a center of the second surface of the substrate held on the stage.

4. The polishing method according to claim 1 , wherein
the feeding the liquid to the first surface of the substrate is feeding the liquid to a central portion of the first surface of the substrate, and
the feeding the liquid to the second surface of the substrate is feeding the liquid to a boundary portion between an area of the second surface of the substrate which is held on the stage and an area of the second surface of the substrate which is not held on the stage.

5. The polishing method according to claim 1 , wherein the liquid is a rinse liquid for polishing the substrate.

6. The polishing method according to claim 1 , wherein the feeding of the liquid to the second surface starts after the liquid fed to the first surface reaches the peripheral portion of the substrate.

7. A polishing apparatus for polishing a substrate, comprising:
a stage for holding the substrate;
a driving section for rotating the stage,
a first nozzle for feeding a liquid to a first surface of the substrate which is not held on the stage,
a second nozzle for feeding the liquid to a second surface of the substrate which is held on the stage,
a control section for feeding the liquid through the second nozzle after a predetermined time has elapsed since feeding of the liquid through the first nozzle started; and
a polishing section for polishing a peripheral portion of the substrate held on the stage while the control section is feeding the liquid to the first surface and the second surface of the substrate,
wherein the feeding of the liquid to the second surface starts during the feeding of the liquid to the first surface.

8. The polishing apparatus according to claim 7 , wherein the control section feeds the liquid through the second nozzle after a predetermined time has elapsed since feeding of the liquid through the first nozzle started, so that the liquid fed to the first surface of the substrate reaches the peripheral portion of the substrate by a centrifugal force before the liquid fed to the second surface of the substrate reaches the peripheral portion of the substrate by a centrifugal force.

9. The polishing apparatus according to claim 7 , wherein the stage is configured to hold a center of the second surface of the substrate, the first nozzle is configured to feed the liquid to a central portion of the first surface of the substrate, and the second nozzle is configured to feed the liquid to a boundary portion between an area of the second surface of the substrate which is held on the stage and an area of the second surface of the substrate which is not held on the stage.

10. The polishing apparatus according to claim 7 , wherein the liquid is a rinse liquid for polishing the substrate.

11. The polishing apparatus according to claim 7 , wherein the feeding of the liquid to the second surface starts after the liquid fed to the first surface reaches the peripheral portion of the substrate.

Assignees

• Ebara Corp

Inventors

• Nakanishi Masayuki
• Kodera Kenji
• Yanaka Nobuhiro

Classifications

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H01L21/02087

  Electricity · mapped topic

• B24B9/08

  of glass · CPC title