Apparatus and process for integrated gas blending

Patent metadata

Field	Value
Publication number	US-9666435-B2
Application number	US-201313964745-A
Country	US
Kind code	B2
Filing date	Aug 12, 2013
Priority date	Jun 22, 2005
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

A system ( 10 ) for delivery of dilute fluid, utilizing an active fluid source ( 12 ), a diluent fluid source ( 14 ), a fluid flow metering device ( 24 ) for dispensing of one of the active and diluent fluids, a mixer ( 38 ) arranged to mix the active and diluent fluids to form a diluted active fluid mixture, and a monitor ( 42 ) arranged to sense concentration of active fluid and/or diluent fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device ( 24 ) to achieve a predetermined concentration of active fluid in the diluted active fluid mixture. A pressure controller ( 34 ) is arranged to control flow of the other of the active and diluent fluids so as to maintain a predetermined pressure of the diluted active fluid mixture dispensed from the system. The fluid dispensed from the system then can be adjustably controlled by a flow rate controller, e.g., a mass flow controller, to provide a desired flow to a fluid-utilizing unit, such as a semiconductor process tool. An end point monitoring assembly is also described, for switching fluid sources ( 12, 15 ) to maintain continuity of delivery of the diluted active fluid mixture.

First claim

The invention claimed is:

1. A gas source assembly, comprising:
a first fluid supply vessel containing a first fluid;
a second fluid supply vessel containing a second fluid;
a fluid flow metering device adapted to dispense one of the first and second fluids;
a mixer arranged to mix the first and second fluids to form a diluted fluid mixture;
a monitor arranged to sense concentration of any of the first fluid and the second fluid in the diluted fluid mixture;
a controller arranged to receive from the monitor a signal indicative of concentration of the first fluid and/or the second fluid in the diluted fluid mixture, and to responsively adjust the fluid flow metering device to achieve a predetermined concentration of first fluid in the diluted fluid mixture; and
a pressure controller disposed directly in a fluid flow path upstream of the mixer, arranged to sense and control pressure of the other of the first and second fluids, and configured to maintain at the mixer a predetermined pressure of said other of the first and second fluids.

2. A gas source assembly according to claim 1 , wherein the monitor is selected from the group consisting of TPIR monitors, photometric monitors, spectroscopic monitors, electrochemical monitors, acoustic monitors, thermal monitors, and infrared photometric monitors.

3. The gas source assembly according to claim 1 , comprising, as a first fluid and a second fluid:
(i) boron trifluoride and hydrogen;
(ii) silicon tetrafluoride and hydrogen;
(iii) phosphine and hydrogen;
(iv) diborane and hydrogen;
(v) silane and hydrogen; or
(vi) germane and hydrogen.

4. The gas source assembly according to claim 1 , wherein the second fluid comprises one or more of ammonia, nitrogen, helium, argon, krypton or xenon.

5. The gas source assembly according to claim 1 , comprising, as a first fluid and a second fluid, boron trifluoride and hydrogen.

6. The gas source assembly according to claim 1 , comprising, as a first fluid and a second fluid, silicon tetrafluoride and hydrogen.

7. The gas source assembly according to claim 1 , comprising, as a first fluid and a second fluid, phosphine and hydrogen.

8. The gas source assembly according to claim 1 , comprising, as a first fluid and a second fluid, diborane and hydrogen.

9. The gas source assembly according to claim 1 , comprising, as a first fluid and a second fluid, silane and hydrogen.

10. The gas source assembly according to claim 1 , comprising, as a first fluid and a second fluid, germane and hydrogen.

11. The gas source assembly according to claim 1 , wherein the first fluid and the second fluid are gases and the mixer comprises a mixing chamber housing a mixing device arranged to mix the first gas with the second gas.

12. The gas source assembly according to claim 1 , wherein the first fluid comprises at least one fluid species selected from the group consisting of arsine, phosphine, nitrogen trifluoride, ammonia, nitrous oxide, tungsten hexafluoride, hydrogen chloride, chlorine, hydrogen bromide, diborane, methane, ethylene, chloroform, propane, butane, sulfur hexafluoride, fluorine, ammonium fluoride, ammonium phosphate, ammonium hydroxide, boranes, boron trifluoride, boron trichloride, dichlorosilane, germane, tetrafluoromethane, trifluoromethane, difluoromethane, methyl fluoride, hexafluoroethane, perfluoropropane, octafluorocyclobutane, nitric oxide, silane, silicon tetrachloride, silicon tetrafluoride, trichlorosilane and hydrogen selenide.

13. The gas source assembly according to claim 1 , wherein the second fluid comprises at least one fluid species selected from the group consisting of nitrogen, argon, helium, krypton, xenon, xenon halides, hydrogen, oxygen and ammonia, and wherein when the second fluid consists of hydrogen, the first fluid does not consist of arsine.

14. The gas source assembly according to claim 13 , wherein the first fluid comprises at least one fluid species selected from the group consisting of arsine, phosphine, nitrogen trifluoride, ammonia, nitrous oxide, tungsten hexafluoride, hydrogen chloride, chlorine, hydrogen bromide, diborane, methane, ethylene, chloroform, propane, butane, sulfur hexafluoride, fluorine, ammonium fluoride, ammonium phosphate, ammonium hydroxide, boranes, boron trifluoride, boron trichloride, dichlorosilane, germane, tetrafluoromethane, trifluoromethane, difluoromethane, methyl fluoride, hexafluoroethane, perfluoropropane, octafluorocyclobutane, nitric oxide, silane, silicon tetrachloride, silicon tetrafluoride, trichlorosilane and hydrogen selenide.

15. A gas source assembly, comprising:
a first fluid supply vessel containing a first fluid;
a second fluid supply vessel containing a second fluid;
a fluid flow metering device adapted to dispense the first fluid;
a mixer arranged to mix the first and second fluids to form a diluted fluid mixture;
a monitor arranged to sense concentration of the first fluid in the diluted fluid mixture;
a controller arranged to receive from the monitor a signal indicative of concentration of the first fluid in the diluted fluid mixture, and to responsively adjust the fluid flow metering device to achieve a predetermined concentration of the first fluid in the diluted fluid mixture; and
a pressure controller disposed between the second fluid supply vessel and the mixer, arranged to sense and control pressure of the second fluid, and configured to maintain at the mixer a predetermined pressure of said second fluid.

16. The gas source assembly according to claim 1 wherein the pressure controller does not use a signal from the monitor to maintain at the mixer the predetermined pressure of the other of the first and second fluids.

17. The gas source assembly according to claim 1 wherein the assembly does not include a pressure control to control pressure of the one of the first and second fluids dispensed from the metering device as supplied to the mixer.

18. The gas source assembly according to claim 1 wherein the assembly does not include a flow metering device to control flow of the other of the first and second fluids as supplied to the mixer.

19. The gas source assembly according to claim 1 wherein the first fluid supply source contains a gas at sub-atmospheric pressure.

20. The gas source assembly according to claim 1 wherein the first fluid supply source contains a neat active gas.

21. The gas source assembly according to claim 1 wherein the first fluid supply source contains gas sorptively retained on a physical adsorbent.

Assignees

• Advanced Tech Materials
• Entegris Inc

Inventors

• Homan Jeffrey J
• Arno Jose I
• Sweeney Joseph D

Classifications

• H10P32/19 Primary

  Diffusion sources · CPC title

• H10P32/00

  Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00) · CPC title

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• F17C2223/0123

  gaseous, e.g. CNG, GNC · CPC title

• G05D11/132

  by controlling the flow of the individual components (G05D11/133 takes precedence) · CPC title