Cu-ga-in-na target
US-2015354055-A1 · Dec 10, 2015 · US
Titanium target for sputtering
US9666418B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9666418-B2 |
| Application number | US-201214353507-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2012 |
| Priority date | Jan 12, 2012 |
| Publication date | May 30, 2017 |
| Grant date | May 30, 2017 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.
First claim
Opening claim text (preview).
The invention claimed is: 1. A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S in total as an additive component, wherein a purity of the target excluding the additive component and gas components is 99.995 mass percent or higher, and a S deposit count in a crystal structure of the titanium target is 100 deposits/mm 2 or less. 2. The titanium target for sputtering according to claim 1 , wherein the purity of the target excluding the additive component and gas components is 99.999 mass percent or higher. 3. The titanium target for sputtering according to claim 1 , wherein an average crystal grain size of the target is 60 μm or less. 4. The titanium target for sputtering according to claim 1 , wherein an average crystal grain size of the target is 30 μm or less. 5. The titanium target for sputtering according to claim 1 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 25 MPa or more. 6. The titanium target for sputtering according to claim 1 , wherein the S deposit count in the crystal structure of the titanium target is 30 deposits/mm 2 or less. 7. The titanium target for sputtering according to claim 1 , wherein the S deposit count in the crystal structure of the titanium target is 10 deposits/mm 2 or less. 8. A high-purity titanium target for sputtering containing 0.5 to less than 3 mass ppm of S in total as an additive component, wherein a purity of the target excluding the additive component and gas components is 99.995 mass percent or higher, and a S deposit count in a crystal structure of the titanium target is 100 deposits/mm 2 or less. 9. The titanium target for sputtering according to claim 8 , wherein the purity of the target excluding the additive component and gas components is 99.999 mass percent or higher. 10. The titanium target for sputtering according to claim 9 , wherein an average crystal grain size of the target is 60 μm or less. 11. The titanium target for sputtering according to claim 9 , wherein an average crystal grain size of the target is 30 μm or less. 12. The titanium target for sputtering according to claim 11 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 25 MPa or more. 13. The titanium target for sputtering according to claim 11 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 30 MPa or more. 14. The titanium target for sputtering according to claim 13 , wherein the S deposit count in the crystal structure of the titanium target is 30 deposits/mm 2 or less. 15. The titanium target for sputtering according to claim 13 , wherein the S deposit count in the crystal structure of the titanium target is 10 deposits/mm 2 or less. 16. The titanium target for sputtering according to claim 8 , wherein an average crystal grain size of the target is 60 μm or less. 17. The titanium target for sputtering according to claim 8 , wherein 0.2% proof stress of the titanium target upon heating the target to 500° C. is 25 MPa or more.
Assignees
Inventors
Classifications
- H01J37/3426Primary
Material · CPC title
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
Alloys based on titanium · CPC title
Alloys containing non-metals (C22C1/05, C22C1/08 take precedence) · CPC title
- C23C14/3407Primary
Cathode assembly for sputtering apparatus, e.g. Target · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9666418B2 cover?
- A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputteri…
- Who is the assignee on this patent?
- Tsukamoto Shiro, Makino Nobuhito, Fukushima Atsushi, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H01J37/3426. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 30 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).