Electrically insulating material and conductor wrap for electrical equipment, such as transformers
US-2016351291-A1 · Dec 1, 2016 · US
Ferroelectric thin film-forming sol-gel solution
US9666331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9666331-B2 |
| Application number | US-201414181394-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2014 |
| Priority date | Mar 19, 2013 |
| Publication date | May 30, 2017 |
| Grant date | May 30, 2017 |
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Abstract
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This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.
First claim
Opening claim text (preview).
What is claimed is: 1. A ferroelectric thin film-forming sol-gel solution comprising: a PZT-based compound; a high-molecular compound used to adjust a viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, wherein an amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, a molar ratio of the PZT-based compound:the polyvinyl pyrrolidone is 1:0.1 to 1:0.5 in terms of monomers, and an amount of the N-methyl pyrrolidone is 3 mass % to 13 mass % in the sol-gel solution. 2. The ferroelectric thin film-forming sol-gel solution according to claim 1 , wherein a k value of the polyvinyl pyrrolidone is in a range of 15 to 90. 3. A method of forming a ferroelectric thin film using the ferroelectric thin film-forming sol-gel solution according to claim 1 . 4. A method of forming a ferroelectric thin film using the ferroelectric thin film-forming sol-gel solution according to claim 2 .
Assignees
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Classifications
Sol or sol-gel processing · CPC title
by heating of the substrate · CPC title
Deposition of multilayers of inorganic material · CPC title
Metal oxides (C23C18/1212 takes precedence) · CPC title
- H01B3/448Primary
from other vinyl compounds · CPC title
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- What does patent US9666331B2 cover?
- This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of t…
- Who is the assignee on this patent?
- Mitsubishi Materials Corp
- What technology area does this patent fall under?
- Primary CPC classification H01B3/448. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 30 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).