Photoresists and methods for use thereof

Patent metadata

Field	Value
Publication number	US-9665001-B2
Application number	US-96931910-A
Country	US
Kind code	B2
Filing date	Dec 15, 2010
Priority date	Dec 15, 2009
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

First claim

What is claimed is:

1. A method for forming a photoresist relief image comprising:
(a) applying on a substrate a chemically-amplified photoresist comprising a resin, a photoactive component and an adhesion-promoting agent; and
(b) exposing the photoresist coating layer to patterned 193 nm radiation;
wherein the resin is substantially or completely free of phenyl or other aromatic groups, and the adhesion-promoting component is selected from the group consisting of:
3-glycidoxypropyl (methyl)diethoxysilane,
3-glycidoxypropyl (dimethyl)ethoxysilane,
n-butyl trimethoxysilane,
n-octyl trimethoxysilane,
3-(pentafluorophenyl)propyl trimethoxysilane,
1,8-bis(triethoxysilyl)octane,
butanediol diglycidyl ether, and
Ethylhexyl glycidyl ether.

2. The method of claim 1 wherein the photoresist composition is applied on an inorganic surface.

3. The method of claim 1 wherein the adhesion-promoting component is selected from the group consisting of:
3-glycidoxypropyl (dimethyl)ethoxysilane,
n-butyl trimethoxysilane,
n-octyl trimethoxysilane,
3-(pentafluorophenyl)propyl trimethoxysilane,
1,8-bis(triethoxysilyl)octane,
butanediol diglycidyl ether, and
Ethylhexyl glycidyl ether.

4. A method for forming a photoresist relief image comprising:
(a) applying on a substrate a chemically-amplified photoresist comprising a resin, a photoactive component and an adhesion-promoting component; and
(b) exposing the photoresist coating layer to patterned activating radiation;
wherein the resin is substantially or completely free of phenyl or other aromatic groups, and
the adhesion-promoting component is selected from the group consisting of:
3-glycidoxypropyl (methyl)diethoxysilane,
3-glycidoxypropyl (dimethyl)ethoxysilane,
3-glycidoxypropyl trimethoxysilane, and
3-glycidoxypropyl triethoxysilane.

5. The method of claim 4 wherein the photoresist composition is applied on an inorganic surface.

6. The method of claim 5 wherein the adhesion-promoting component is selected from the group consisting of:
3-glycidoxypropyl (dimethyl)ethoxysilane,
3-glycidoxypropyl trimethoxysilane, and
3-glycidoxypropyl triethoxysilane.

Assignees

• Pohlers Gerhard
• Rohm & Haas Elect Mat

Inventors

• Pohlers Gerhard

Classifications

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/0392 Primary

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/0085

  characterised by the non-macromolecular additives · CPC title

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title