Oxide sintered compact, its production method, and raw material powder for producing oxide sintered compact

Patent metadata

Field	Value
Publication number	US-9663405-B2
Application number	US-201013375404-A
Country	US
Kind code	B2
Filing date	May 28, 2010
Priority date	Jun 5, 2009
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.

First claim

The invention claimed is:

1. An oxide sintered compact having a composition including In, Ga, Zn, and O and represented by a formula In 2 Ga 2 ZnO 7 , wherein the oxide sintered compact contains gallium chloride as an impurity in an amount of 20 ppm or less and has a relative density of 99% or higher.

2. The oxide sintered compact according to claim 1 , wherein the oxide sintered compact has a bulk resistance of 5.0×10 -2 Ωcm or less.

3. A method of producing an oxide sintered compact having a composition including In, Ga, Zn, and O and represented by a formula In 2 Ga 2 ZnO 7 , wherein indium oxide, gallium oxide and zinc oxide raw material powders respectively containing gallium chloride in an amount of 20ppm or less are mixed and sintered to produce an oxide sintered compact containing gallium chloride as an impurity in an amount of 20 ppm or less and having a relative density of 99% or higher.

Assignees

• Ikisawa Masakatsu
• Yahagi Masataka
• Osada Kozo
• Kakeno Takashi
• Takami Hideo
• Jx Nippon Mining & Metals Corp

Inventors

• Ikisawa Masakatsu
• Yahagi Masataka
• Osada Kozo
• Kakeno Takashi
• Takami Hideo

Classifications

• C04B2235/6585

  at an oxygen percentage above that of air · CPC title

• C04B2235/5445

  submicron sized, i.e. from 0,1 to 1 micron · CPC title

• C04B2235/5409

  expressed by specific surface values · CPC title

• C04B2235/3286

  Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate · CPC title

• C04B2235/604

  Pressing at temperatures other than sintering temperatures · CPC title