Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US9662730B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9662730-B2 |
| Application number | US-201414475249-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2014 |
| Priority date | Sep 3, 2013 |
| Publication date | May 30, 2017 |
| Grant date | May 30, 2017 |
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Official abstract text for this publication.
A bump electrode is formed on an electrode pad using a Cu core ball in which a core material is covered with solder plating, and a board which has bump electrodes such as semiconductor chip or printed circuit board mounts such a bump electrode. Flux is coated on a substrate and the bump electrodes are then mounted on the electrode pad. In a step of heating the electrode pad and the Cu core ball to melt the solder plating, a heating rate of the substrate is set to have not less than 0.01° C./sec and less than 0.3.
Opening claim text (preview).
What is claimed is: 1. A method for making a bump electrode on an electrode pad, the bump electrode being made from a core ball covered with solder plating, comprising the steps of: providing an electrode pad; mounting the core ball covered with solder plating on the electrode pad; and heating the electrode pad and thereby melting the solder plating in a reflow process wherein a heating rate is such as to raise a temperature of the electrode pad during the reflow process not less than 0.01 degrees C./second and less than 0.3 degrees C./second in the heating and melting step while heating in the temperature range from 210° C. to 230° C. 2. A method for manufacturing a board which has a bump electrode, the method comprising the steps of: providing an electrode pad on a substrate; mounting a connecting member, the connecting member including a core ball covered with solder plating, on the electrode pad; and heating the substrate and thereby melting the solder plating with which the core ball is covered, while controlling a rate of heating the substrate and thereby raising the temperature of the electrode pad during a reflow process by not less than 0.01° C./sec but less than 0.3° C./sec in the step of melting the solder plating while heating in the temperature range from 210° C. to 230° C.).
Packaging processes not covered by the other groups of this subclass · CPC title
by reflowing · CPC title
in solid form, e.g. by using a powder or by stud bumping · CPC title
at a different location than on the final device, e.g. forming as prepeg · CPC title
of outermost layers of multilayered bumps, e.g. material of a coating · CPC title
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