Sensors including complementary lateral bipolar junction transistors

Patent metadata

Field	Value
Publication number	US-9659979-B2
Application number	US-201514884725-A
Country	US
Kind code	B2
Filing date	Oct 15, 2015
Priority date	Oct 15, 2015
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

First claim

What is claimed is:

1. An integrated radiation sensor, comprising:
a sensing structure;
a first lateral bipolar junction transistor having a base that is electrically coupled to the sensing structure, the first lateral bipolar junction transistor being configured to generate an output signal indicative of a change in stored charge in the sensing structure resulting from a presence of an environmental property;
a second lateral bipolar junction transistor adjacent and electrically connected to the first lateral bipolar junction transistor, the second lateral bipolar junction transistor being configured to amplify the output signal of the first lateral bipolar junction transistor, the first lateral bipolar junction transistor and the second lateral bipolar junction transistor having opposite polarities, and
a substrate, wherein the first lateral bipolar junction transistor, the second lateral bipolar junction transistor and the substrate form a monolithic structure.

2. The integrated radiation sensor of claim 1 , wherein the sensing structure comprises an electrically insulating layer positioned on and electrically contacting a base of said first lateral bipolar junction transistor.

3. The integrated radiation sensor of claim 2 , wherein at least one of said first and second lateral bipolar junction transistors comprises an inverted lateral bipolar junction transistor.

4. The integrated radiation sensor of claim 3 , wherein the first lateral bipolar junction transistor is an inverted lateral bipolar junction transistor and the sensing structure forms an external layer on the base of the first lateral bipolar junction transistor.

5. The integrated radiation sensor of claim 4 , wherein the first bipolar junction transistor is an NPN transistor and the second bipolar junction transistor is a PNP transistor.

6. The integrated radiation sensor of claim 1 , wherein the sensing structure includes a buried oxide layer.

7. The integrated radiation sensor of claim 6 , further including a neutron conversion layer within the buried oxide layer.

8. The integrated radiation sensor of claim 1 , wherein a base of the second lateral bipolar junction transistor is electrically connected to an output terminal of the first lateral bipolar junction transistor.

9. The integrated radiation sensor of claim 8 , wherein the first lateral bipolar junction transistor is a PNP transistor and the second lateral bipolar junction transistor is an NPN transistor.

10. The integrated radiation sensor of claim 1 , wherein the base of the second lateral bipolar junction transistor has a doping concentration smaller than a doping concentration of an emitter region of the second lateral bipolar junction transistor by a factor larger than ten (10).

11. The integrated radiation sensor of claim 1 , wherein an output terminal of the first lateral bipolar junction transistor is configured to feed current directly into a base of the second lateral bipolar junction transistor, and an output terminal of the second bipolar junction transistor is configured to generate an output signal of the integrated radiation sensor.

12. A sensor assembly comprising:
an integrated radiation sensor including:
a sensing structure;
a first lateral bipolar junction transistor having a first base region electrically coupled to the sensing structure and first collector and emitter regions operatively associated with the first base region, the first lateral bipolar junction transistor being configured to generate an output signal from the first emitter region indicative of a change in stored charge in the sensing structure resulting from a presence of an environmental property;
a second lateral bipolar junction transistor adjacent to the first lateral bipolar junction transmitter and including a second base region and second collector and emitter regions operatively associated with the second base region, the second base region being electrically connected to the first emitter of the first lateral bipolar junction transistor, wherein the second lateral bipolar junction transistor is configured to amplify the output signal of the first lateral bipolar junction transistor, the first lateral bipolar junction transistor and the second lateral bipolar junction transistor having opposite polarities, and
a substrate, wherein the first lateral bipolar junction transistor, the second lateral bipolar junction transistor and the substrate form a monolithic structure;

a first supply voltage source electrically connected to the first base region and the first collector region of the first lateral bipolar junction transistor, and
a second supply voltage source electrically connected to the second emitter region of the second lateral bipolar junction transistor.

13. The sensor assembly of claim 12 , wherein the sensing structure comprises an electrically insulating layer directly contacting a top surface of the first base region of the first lateral bipolar junction transistor.

14. The sensor assembly of claim 12 , wherein at least one of said first and second lateral bipolar junction transistors comprises an inverted lateral bipolar junction transistor.

15. The sensor assembly of claim 12 , wherein the first lateral bipolar junction transistor further includes a forward-biased junction of the first emitter region and the first base region junction and a zero or reverse-biased junction of the first collector region and the first base region.

16. The sensor assembly of claim 1 , wherein the first lateral bipolar junction transistor further includes a forward-biased junction of the first emitter region and the first base region junction and a zero or reverse-biased junction of the first collector region and the first base region.

Assignees

• IBM

Inventors

• Gordon Michael S
• Ning Tak H
• Rodbell Kenneth P
• Yau Jeng-Bang

Classifications

• G01T1/026

  Semiconductor dose-rate meters · CPC title

• H01L31/18

  Electricity · mapped topic

• H01L31/118

  Electricity · mapped topic

• H01L27/1443 Primary

  Electricity · mapped topic

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title