Systems and methods for signal processing in molecular imaging
US-2024013454-A1 · Jan 11, 2024 · US
Charge sensors using inverted lateral bipolar junction transistors
US9040929B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040929-B2 |
| Application number | US-201213561671-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2012 |
| Priority date | Jul 30, 2012 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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Abstract
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A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.
First claim
Opening claim text (preview).
What is claimed is: 1. A sensor, comprising: a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor; a level surface formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transis…
Assignees
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- G01T1/247Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9040929B2 cover?
- A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charg…
- Who is the assignee on this patent?
- Cai Jin, Ning Tak H, Yau Jeng-Bang, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G01T1/247. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).