Display device comprising a metal oxide semiconductor channel and a specified insulating layer arrangement

Patent metadata

Field	Value
Publication number	US-9659968-B2
Application number	US-201414244419-A
Country	US
Kind code	B2
Filing date	Apr 3, 2014
Priority date	Apr 11, 2013
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

First claim

What is claimed is:

1. A display device comprising a pixel portion and a driver circuit portion outside the pixel portion,
the pixel portion comprising:
a pixel transistor;
a first insulating layer which covers the pixel transistor and includes an inorganic material;
a second insulating layer which is over the first insulating layer and includes an organic material; and
a third insulating layer which is over and in direct contact with the second insulating layer and includes an inorganic material,

the driver circuit portion comprising:
a driving transistor for supplying a signal to the pixel transistor; and
the first insulating layer covering the driving transistor,

wherein the second insulating layer is not formed in the driver circuit portion, and
wherein the third insulating layer is in direct contact with a top surface and a side surface of the first insulating layer in the pixel portion.

2. The display device according to claim 1 ,
wherein the driver circuit portion comprises the third insulating layer over the first insulating layer.

3. The display device according to claim 2 ,
wherein the first insulating layer is in contact with the third insulating layer in the driver circuit portion.

4. The display device according to claim 1 , further comprising a non-display region outside the driver circuit portion,
wherein the non-display region comprises the first insulating layer and does not comprise the second insulating layer.

5. The display device according to claim 1 ,
wherein a channel of each of the pixel transistor and the driving transistor is formed in an oxide semiconductor layer.

6. The display device according to claim 5 ,
wherein the oxide semiconductor layer comprises at least one oxide selected from the group consisting of indium oxide, tin oxide, and zinc oxide.

7. The display device according to claim 5 ,
wherein the oxide semiconductor layer is an In-Ga-Zn-based oxide semiconductor layer.

8. The display device according to claim 5 ,
wherein the oxide semiconductor layer comprises a crystal part, and
wherein a c-axis of the crystal part is parallel to a normal vector of a surface where the oxide semiconductor layer is formed.

9. The display device according to claim 1 ,
wherein each of the pixel transistor and the driving transistor comprises a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate electrode with the gate insulating layer therebetween, and a source electrode and a drain electrode over the oxide semiconductor layer.

10. The display device according to claim 9 ,
wherein the pixel portion further comprises a layer under the first insulating layer and over the gate insulating layer, and
wherein the layer is formed in a vicinity of a boundary between the driver circuit portion and the pixel portion.

11. The display device according to claim 10 ,
wherein the layer is formed in the same layer as the source electrode.

12. The display device according to claim 1 ,
wherein the first insulating layer is a silicon film including at least one of oxygen and nitrogen.

13. The display device according to claim 1 ,
wherein the first insulating layer comprises a layered structure of a silicon oxide film and a silicon nitride film.

14. The display device according to claim 1 ,
wherein the first insulating layer comprises a layered structure of a silicon oxynitride film and a silicon nitride film.

15. The display device according to claim 1 ,
wherein the second insulating layer includes an acrylic-based resin material.

16. The display device according to claim 1 ,
wherein the third insulating layer is a silicon film including nitrogen.

17. The display device according to claim 1 ,
wherein the pixel portion further comprises a first electrode and a second electrode,
wherein the first electrode is over the second insulating layer,
wherein the third insulating layer is over the first electrode, and
wherein the second electrode is over the third insulating layer.

18. Electronic device comprising the display device according to claim 1 .

19. A display device comprising a pixel portion and a driver circuit portion outside the pixel portion,
the pixel portion comprising:
a pixel transistor;
a first insulating layer which covers the pixel transistor and includes a silicon film containing oxygen;
a second insulating layer which is over the first insulating layer and includes an acrylic-based resin material; and
a third insulating layer which is over and in direct contact with the second insulating layer and includes a silicon film containing nitrogen,

the driver circuit portion comprising:
a driving transistor for supplying a signal to the pixel transistor; and
the first insulating layer covering the driving transistor,

wherein the second insulating layer is not formed in the driver circuit portion, and
wherein the third insulating layer is in direct contact with a top surface and a side surface of the first insulating layer in the pixel portion.

20. The display device according to claim 19 ,
wherein the pixel portion further comprises a first electrode and a second electrode,
wherein the first electrode is over the second insulating layer,
wherein the third insulating layer is over the first electrode, and
wherein the second electrode is over the third insulating layer.

21. Electronic device comprising the display device according to claim 19 .

Assignees

• Koezuka Junichi
• Katayama Masahiro
• Shima Yukinori
• Okazaki Kenichi
• Matsuo Takuya
• Mori Shigeyasu
• Kanzaki Yosuke
• Matsukizono Hiroshi
• Semiconductor Energy Lab
• Sharp Kk

Inventors

• Koezuka Junichi
• Katayama Masahiro
• Shima Yukinori
• Okazaki Kenichi
• Matsuo Takuya
• Mori Shigeyasu
• Kanzaki Yosuke
• Matsukizono Hiroshi

Classifications

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H01L23/3121

  Electricity · mapped topic

• H01L27/1248

  Electricity · mapped topic

• H01L23/564

  Electricity · mapped topic