Semiconductor device and method of producing semiconductor device

Patent metadata

Field	Value
Publication number	US-9659841-B2
Application number	US-201414518137-A
Country	US
Kind code	B2
Filing date	Oct 20, 2014
Priority date	Oct 30, 2013
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A method of producing a semiconductor device, comprising the steps of forming a through hole in a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole passes through the semiconductor substrate from the first main surface to the second main surface; forming an insulation film to extend from a bottom portion of the through hole to the first main surface through a side surface of the through hole; coating an organic member on the insulation film on the side surface of the through hole and the first main surface; removing an air bubble in the organic member and between the organic member and the insulation film; and forming a first opening portion in the organic member.

First claim

What is claimed is:

1. A method of producing a semiconductor device, comprising the steps of:
forming a through hole in a semiconductor substrate, said semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole passes through the semiconductor substrate from the first main surface to the second main surface;
forming an insulation film to extend from a bottom portion of the through hole on a side of the second main surface to the first main surface through a side surface of the through hole;
coating an organic member on at least the insulation film on the side surface of the through hole and the insulation film on the first main surface;
removing an air bubble in the organic member and an air bubble between the organic member and the insulation film when the air bubble is formed in the organic member and between the organic member and the insulation film during the step of coating the organic member; and
forming a first opening portion in the organic member.

2. The method of producing the semiconductor device according to claim 1 , wherein, in the step of removing the air bubble in the organic member and the air bubble between the organic member and the insulation film, said semiconductor substrate is placed under a vacuum state to remove the air bubble.

3. The method of producing the semiconductor device according to claim 1 , wherein, in the step of removing the air bubble in the organic member and the air bubble between the organic member and the insulation film, said semiconductor substrate is placed under a vacuum state and is vibrated using ultrasonic waves to remove the air bubble.

4. The method of producing the semiconductor device according to claim 1 , further comprising the step of forming a second opening portion in the insulation film with the organic member having the first opening portion formed therein as a mask.

5. The method of producing the semiconductor device according to claim 1 , further comprising the steps of forming a dry film on the first main surface, and forming a second conductive layer on the organic member with the dry film as a mask.

6. The method of producing the semiconductor device according to claim 5 , wherein, in the step of forming the second conductive layer on the organic member, said second conductive layer is formed to have a thickness on the first main surface greater than that thereof in the through hole.

7. The method of producing the semiconductor device according to claim 1 , further comprising the step of forming a second opening portion in the insulation film so that the first conductive layer is exposed at the bottom portion of the through hole,
wherein, in the step of forming the through hole in the semiconductor substrate, said through hole is formed in the semiconductor substrate so that the first conductive layer is exposed in the through hole,
in the step of forming the insulation film, said insulation film is formed to extend from the first conductive layer exposed at the bottom portion of the through hole on the side of the second main surface to the first main surface through the side surface of the through hole,
in the step of coating the organic member, said organic member is coated on the first conductive layer exposed at the bottom portion of the through hole, the insulation film on the side surface of the through hole, and the insulation film on the first main surface, and
in the step of forming the first opening portion in the organic member, said first opening portion is formed in the organic member so that the first conductive layer is exposed at the bottom portion of the through hole.

8. The method of producing the semiconductor device according to claim 1 , further comprising the step of forming a second opening portion in the insulation film so that the first conductive layer is exposed,
wherein, in the step of forming the through hole in the semiconductor substrate, said through hole is formed in the semiconductor substrate so that the first conductive layer is exposed in the through hole,
in the step of forming the insulation film, said insulation film is formed to extend from the first conductive layer exposed at the bottom portion of the through hole on the side of the second main surface to the first main surface through the side surface of the through hole,
in the step of forming the first opening portion in the organic member, said first opening portion is formed in the organic member so that the insulation film is exposed in the first opening portion, and
in the step of forming the second opening portion in the insulation film, said second opening portion is formed with the organic member having the first opening portion formed therein so that the first conductive layer is exposed in the second opening portion.

9. The method of producing the semiconductor device according to claim 1 , wherein, in the step of forming the organic member, said organic member is formed to have a round surface at the bottom portion of the through hole.

Assignees

• Lapis Semiconductor Co Ltd

Inventors

• Nomura Akihiko

Classifications

• H10W20/216

  characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/0265

  characterised by the sidewall insulation · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title